Page 1
Application
Low frequency amplifier, Muting
Outline
SPAK
2SD1504
Silicon NPN Epitaxial
1
2
3
1. Emitter
2. Collector
3. Base
Page 2
2SD1504
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current ic
Collector power dissipation P
CBO
CEO
EBO
C
(peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
CBO
DC current transfer ratio hFE*
Base to emitter voltage V
Collector to emitter saturation
V
BE
CE(sat)
voltage
V
CE(sat)
Gain bandwidth product f
On resistance r
T
on
Notes: 1. The 2SD1504 is grouped by hFE as follows.
2. Pulse test
DEF
250 to 500 400 to 800 600 to 1200
30 — — V IC = 10 µA, IE = 0
15 — — V IC = 1 mA, RBE = ∞
5——VI
——10µAV
1
250 — 1200 V
— 0.65 — V V
— 0.15 0.5 V IC = 500 mA, IB = 50 mA*
— 0.018 — V IC = 30 mA, IB = 3 mA
— 300 — MHz V
— 0.5 — Ω IB = 2 mA
30 V
15 V
5V
0.5 A
1.0 A
300 mW
= 10 µA, IC = 0
E
= 20 V, IE = 0
CB
= 1 V, IC = 150 mA*
CE
= 1 V, IC = 150 mA
CE
= 1 V, IC = 50 mA
CE
2
2
2
Page 3
2SD1504
Maximum Collector Dissipation Curve
300
(mW)
C
200
100
Collector Power Dissipation P
0
Ambient Temperature Ta (°C)
Typical Output Characteristics
100
80
(mA)
C
60
40
20
Collector Current I
160
140
120
100
80
60
40
IB = 20 µA
Typical Output Characteristics
10
8
(mA)
C
6
15.0
12.5
10.0
4
7.5
5.0
2
Collector Current I
15010050
0
286104
Collecter to Emitter Voltage V
IB = 2.5 µA
CE
(V)
Typical Transfer Characteristics
10
VCE = 1 V
8
(mA)
C
6
4
2
Collector Current I
0
0.2 0.80.6 1.00.4
Collector to Emitter Voltage V
CE
(V)
0
Base to Emitter Voltage V
BE
1.00.2 0.4 0.6 0.8
(V)
3
Page 4
2SD1504
1,000
FE
300
100
30
DC Current Transfer Ratio vs.
Collector Current
VCE = 1 V
Pulse
(V)
CE(sat)
Saturation Voltage vs. Collector Current
1,000
(V)
BE(sat)
300
IC/IB = 10
Pulse
100
30
V
CE(sat)
V
BE(sut)
10
3
DC Current Transfer Ratio h
1
1
Collector current I
Gain Bandwidth Product vs.
Collector Current
1,000
VCE = 1 V
500
(MHz)
T
200
100
50
20
Gain Bandwidth Product f
10
2 20 20010 100505
Collector Current I
(mA)
C
(mA)
C
10
3
Base to Emitter Saturation Voltage V
100010010 300303
Collector to Emitter Saturation Voltage V
1
3 10 1,000300100130
Collector Current I
(mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
100
(pF)
ob
f = 1 MHz
= 0
I
E
30
10
3
Collector Output Capacitance C
1
100301031
Collector to Base Voltage V
CB
(V)
4
Page 5
On Resistance vs. Base Current
10
3
(Ω)
on
1.0
0.3
On Resistance r
IN OUT
3 kΩ
3 kΩ
I
B
f = 10 kHz
2SD1504
0.1
Base Current I
(mA)
B
100.3 31.00.1
5
Page 6
4.2 Max
3.2 Max
1.8 Max
2.2 Max
Unit: mm
0.6 Max
0.45 ± 0.1
1.27 1.27
2.54
0.6
14.5 Min
Hitachi Code
JEDEC
EIAJ
Weight
0.4 ± 0.1
(reference value)
SPAK
—
—
0.10 g
Page 7
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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