Datasheet 2SD1949, 2SD1484K Datasheet (ROHM)

Medium Power Transistor (50V,0.5A)

Medium Power Transistor (50V,0.5A)

2SD1949 / 2SD1484K

2SD1484K

2SD1949

Features Dimensions (Unit : mm)

1) High current.(I

2) Low saturation voltage, typically V

C=0.5A)

CE(sat)=0.1V at IC / IB=150mA / 15mA.

UMT3

(SC-70)
<SOT-323>

(1) Emitter
(2) Bace
(3) Collector

Absolute maximum rationgs (Ta=25 C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

PC

Tj

Tstg

Limits

50

50

5

0.5

0.2

150

−55 to +150

Unit

V

V

V

A

W

C

C

SMT3

(SC-59)
<SOT-346>

(1) Emitter

2.9

(3)

(2)

0.95 0.95

1.9

0.4

(2) Bace
(3) Collector

Data Sheet

1.1

0.8

1.6

2.8

(1)

0.15

0.3Min.

Electrical characteristics (Ta=25 C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector outoff current

Emitter cutoff current

DC current rransfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Packaging specifications and h

Type

Package

h

FE

Marking

Code

Basic ordering unit (pleces)

Danotes hFE

FE values are classified as follows :

h

Item Q R

h

FE 120 to 270 180 to 390

2SD1949

UMT3

QR

Y Y

T106

3000

Symbol Min. Typ. Max.

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

f

T

Cob

FE

50

50

120

−

−

5

−

−

−

−

−

−

−−

250

−

6.5

−

2SD1484K

SMT3

QR

T146

3000

Unit Conditions

−

−

−

0.5

0.5

390

0.4

−

−

I

V

C

V

I

C

I

V

E

V

µA
µA

V

V

−

VI

V

MHz

V

pF

=

100µA

=

1mA

=

100µA

=

30V

CB

=

4V

EB

=

CE/IC

=

150mA/15mA

C/IB

=

5V , I

CE

=

10V , I

CB

3V/10mA

=

−20mA , f=100MHz

E

=

0A , f=1MHz

E

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1/2

2011.06 -

Rev. E

2SD1949

2SD1949 / 2SD1484K

2SD1484K

Electrical characteristic curves

Electrical characteristic curves

200

100

VCE=6V

50

20
10

5

2

Ta= 100 C

25 C

25 C

-

1

0.5

COLLECTOR CURRENT : IC (mA)

0.2

0.1

0.20 0.4 0.80.6 1.21.0

BASE TO VOLTAGE : V

Fig.1 Ground emitter propagation
characteristics

BE (V)

100

VCE=6V

80

60

40

20

COLLECTOR CURRENT : IC (mA)

0

102435

COLLECTOR TO EMITTER VOLTAGE : V

0.50

0.45

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

IB=0mA

CE (V)

Fig.2 Ground emitter output characteristics

Data Sheet

1000

500

200

100

DC CURRENT GAIN hFE

50

0.1 0.2 0.5 1 2 5 10 20 50 100 200 500

COLLECTOR CURRENT I

Fig.3 DC current gain vs. Collector current ( )

Ta=25 C

VCE=3V

1V

C (mA)

1000

500

200

Ta=75 C

25 C

-

25 C

VCE=10V

100

50

DC CURRENT GAIN hFE

20

12 5

10 20 50 100

200 500 1000

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)

Fig.4 DC current gain vs. Collector currnet ( )

Ta=25 C

50

Cib

20

10

Cob

5

f=1MHz
I

E=0A

0.5

0.2

=100/1

CE (sat) (V)

0.1

0.05

VOLTAGE : V

COLLECTOR SATURATION

0.02

B

/I

C

I

50/1

20/1

10/1

5 10 20 50 100 200 500

Fig.5 Collector-emitter saturation voltage
vs. Collector current

500

T (MHZ)

200

TRANSITION

FREQUENCY : f

Ta=25 C

Ta=25 C

VCE=6V

0.5

0.2

CE (sat) (V)

0.1

0.05

VOLTAGE : V

COLLECTOR SATURATION

0.02

Ta=75 C

10 20 50 100

5

-

25 C

25 C

200 500 1000

COLLECTOR CURRENT IC (mA)

Fig.6 Collector-emitter saturation voltage
vs. collector current

IC/IB=10

0.1 0.2 0.5

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

EMITTER INPUT CAPACITANCE : Cib (pF)

COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : V

12 510

EB (V)

20

Fig.7 Input-and-output capacity
vs.voltage characteristic

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100

-

1

-2-5-10-20-

EMITTER CURRENT : IE (mA)

Fig.8 Transition frequency
vs.emitter current

2/2

50

2011.06 -

Rev. E

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A