Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD1410
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·Collector-Emitter Saturation Voltage :V
CE(sat)
·High DC Current Gain
: h
= 2000(Min) @ IC= 2A, VCE= 2V
FE
APPLICATIONS
·Igniter applications
·High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(T
= 250V(Min)
= 2.0V(Max) @IC= 4A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 300 V
Collector-Emitter Voltage 250 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 6 A
B Base Current-Continuous 1 A
Collector Power Dissipation
@ T
=25℃
a
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150
Storage Temperature Range -55~150
2.0
W
30
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD1410
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(
V
BE(
I
CBO
I
EBO
h
FE -1
h
FE -2
C
sat
OB
Collector-Emitter Sustaining Voltage IC= 0.5A ; L= 40mH 250 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.0 V
)
Base-Emitter Saturation Voltage IC= 4A; IB= 40mA B 2.5 V
)
sat
Collector Cutoff Current VCB= 300V; IE= 0 500 μA
Emitter Cutoff Current VEB= 5V; IC=0 500 μA
DC Current Gain IC= 2A ; VCE= 2V 2000
DC Current Gain IC= 4A ; VCE= 2V 200
Output Capacitance
Switching times
t
on
Turn-on Time 1.0 μs
I
= 0 ; VCB= 10V; f
E
=1MHz
test
35 pF
I
= 4A , IB1= -IB2= 40mA
t
stg
t
f
Storage Time 8.0 μs
Fall Time
C
= 25Ω; VCC= 100V
R
L
5.0 μs
isc Website：www.iscsemi.cn
2
Page 3
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD1410
isc Website：www.iscsemi.cn
Loading...