Datasheet 2SD1898, 2SD1768S, 2SD1863, 2SD1733, 2SD1381F Datasheet (ROHM)

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F

Transistors

Power Transistor (80V, 1A)

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /
2SD1381F

Features

!

CEO

1) High V

2) High I

3) Good h

4) Low V

CEO

, V

C

, IC=1A (DC)

FE

linearity

CE

(sat)

=80V

5) Complements the 2SB1260 /
2SB1241 / 2SB1181

Structure

!

Epitaxial planer type
NPN silicon transistor

External dimensions

!

2SD1898

ROHM : MPT3
EIAJ : SC-62

2SD1733

6.5±0.2

0.3

±

1.5

0.1

0.3

−

+

5.5

0.75

ROHM : CPT3
EIAJ : SC-63

C0.5

+

0.2

5.1

−

0.1

0.9

0.65

±

0.9

(1)

0.1

2.3±0.22.3±0.2

(2)

(3)

(Units : mm)

+0.2

4.5

−0.1

1.6±0.1

0.5±0.1

−0.1

+0.2

2.5

4.0±0.3

0.5±0.1

0.4±0.1

1.5±0.1

1.0±0.2

3.0±0.2

Abbreviated symbol : DF

+

0.2

2.3

−

0.1

±

0.1

0.5

0.5

±

1.5

9.5

2.5

0.55

±

0.1

±

0.2

1.0

(1) Base
(2) Collector
(3) Emitter

(3)(2)(1)

0.4±0.1

1.5±0.1

+0.2

1.5

−0.1

0.4

2SD1768S

4±0.2

3±0.2(15Min.)

5

(1)

(2) (3)

ROHM : SPT
EIAJ : SC-72

+0.1

−0.05

(1) Base
(2) Collector
(3) Emitter

2±0.2

3Min.

+0.15

0.45

−0.05

+0.4

2.5

−0.1

+0.15

0.45

0.5

−0.05

(1) Emitter
(2) Collector
(3) Base

2SD1863

0.65Max.

(1)

6.8±0.2

(2)

2.54

2SD1381F

2.5±0.2

0.9

4.4±0.2

1.0

0.5±0.1

(3)

2.54

14.5±0.5

1.05

0.45±0.1

(1) Emitter
(2) Collector
(3) BaseROHM : ATV

7.8±0.2

10.8±0.216.0±0.5

1.21.1

1.75

2.3±0.5 2.3±0.5

(2)

(1)

(3)

0.8

1.6

0.95

Back

Front

6.9

φ

φ

3.19

9.2

0.7±0.1

3.2±0.2

3.3

C0.7

(1) Emitter
(2) Collector
(3) BaseROHM : TO-126FP

1.76±0.5

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F

Transistors

Absolute maximum ratings

!

Parameter Symbol
Collector-base voltage V
Collector-emitter voltage VCEO 80 V
Emitter-base voltage V

Collector current

2SD1898

Collector power
dissipation

Junction temperature Tj 150 ˚C
Storage temperature Tstg −55∼+150 ˚C

1 Pw=20ms, duty=1 / 2

∗

2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.

∗

3 When mounted on a 40×40×0.7mm ceramic board.

∗

2SD1733

2SD1768S

2SD1863

2SD1381F

(Ta=25°C)

Limits

CBO 100 V

EBO 5V

C

I

C

P

1 A (DC)
2 A (Pulse)

0.5
2
1

10

W (Tc=25˚C)

0.3
1

1.2
5

W (Tc=25˚C)

Unit

W

W

1

∗

3

∗

2

∗

Electrical characteristics

!

(Ta=25°C)

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

DC current
transfer ratio

2SD1733, 2SD1898
2SD1768S

2SD1381F
Collector-emitter saturation voltage
Transition frequency
Output capacitance

Measured using pulse current

*

Symbol

CBO

BV
BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

f

T

Cob

Min.

Typ. Max. Unit Conditions

C

=

100

1802SD1863

80

−

−

−

−

5

−

−

−

−

1

−

1

−

390

−

82 − 390 −

120 − 390 −

µA
µA

VI

C

=

I

V

I

V

E

=

V

CB

EB

V

−

V

CE

50µA
1mA

50µA

=
=

=

82 − 270 −

−

−

−

0.15
100

20

0.4

−

−

V

MHz

pF

I

C/IB

=

CE

=

V
V

CB

=

80V
4V

3V, I

C

=

0.5A

500mA/20mA

10V, I

E

=−

50mA, f=100MHz

10V, I

E

=

0A, f=1MHz

∗

Transistors

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F

Packaging specifications and h

!

Package Taping
Code

FE

Type

2SD1898
2SD1733
2SD1768S

2SD1863
2SD1381F

FE

h

values are classified as follows :

Item

h

FE

Electrical characteristic curves

!

1000

(mA)

100

C

10

1

COLLECTOR CURRENT : I

0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

BASE TO EMITTER VOLTAGE : V

Basic ordering unit (pieces)
PQR
PQR
QR
R
PQ

P

82~180

Q

120~270

Ta=25˚C
V

Fig.1 Grounded emitter propagation

characteristics

FE

Bulk
T100
1000h

−

−

−

−

TL

2500

−

−

−

−

TV2

TP

2500

5000 2000

−

−

−

−−

−

−

−

−

−

−

−

−

R

180~390

CE

=5V

BE

(V)

1.0

A)

(

C

0.8

0.6

0.4

0.2

COLLECTOR CURRENT : I

0

2408106

COLLECTOR TO EMITTER VOLTAGE : VCE (

Fig.2 Grounded emitter output

characteristics

Ta=25˚C

6mA

5mA

4mA

3mA

2mA

1mA

IB=0mA

V)

FE

1000

100

DC CURRENT GAIN : h

0

COLLECTOR CURRENT : IC (

Fig.3 DC current gain vs.

collector current

Ta=25˚C

VCE=3V
1V

1000 10 1000

mA)

V)

(

CE(sat)

2.0

1.0

0.5

0.2
IC/IB=20/1

0.1

0.05

0.02

0.01

COLLECTOR SATURATION VOLTAGE : V

10/1

1000 10 1000

COLLECTOR CURRENT : IC (

Fig.4 Collector-emitter saturation

voltage vs. collector current

Ta=25˚C

mA)

500

(MHz)

200
100

50

20
10

5

2

TRANSITION FREQUENCY : fT

1 2 5 10 20 50 100 200 5001000

EMITTER CURRENT : −IE

Fig.5 Gain bandwidth product vs.

emitter current

Ta=25˚C
V

(mA)

CE=5V

1000

pF)

pF)

100

10

COLLECTOR OUTPUT CAPACITANCE : Cob (

EMITTER INPUT CAPACITANCE : Cib (

1

0.1 0.2 0.5 1 2 5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (

EMITTER TO BASE VOLTAGE : VEB (

Fig.6 Collector output capacitance vs.

collector-base voltage
Emitter input capacitance vs.
emitter-base voltage

Ta=25˚C
f=1MHz

E

=0A

I
Ic=0A

V)
V)

Transistors

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F

10

5

Ic Max (Pulse)

2

(A)

DC

1

500m
200m

100m

50m
20m

10m

5m

COLLECTOR CURRENT : IC

2m
1m

0.1 0.2 0.5 1 2 5 10 20 50100 500200 1000
COLLECTOR TO EMITTER VOLTAGE : VCE

Pw=100mS

Pw=10m

Ta=25˚C
Single
non-repetitive
pulse

S

Fig.7 Safe operating area

(2SD1863)

10

5
2

A)

(

C

1

500m
200m

100m

50m
20m

10m

5m

COLLECTOR CURRENT : I

2m
1m

0.1 0.2 0.5 1 2 5 10 20 50100 500200 1000

(V)

COLLECTOR TO EMITTER VOLTAGE : VCE (

Ic Max (Pulse)

DC

Pw=10m

Pw=100mS

S

Fig.8 Safe operating area

(2SD1898)

Ta=25˚C
Single
non-repetitive
pulse

10

5
2

(A)

C

1

500m
200m

100m

50m
20m

10m

5m

COLLECTOR CURRENT : I

2m
1m

0.1 0.2 0.5 1 2 5 10 20 50100 500200 1000

V)

COLLECTOR TO EMITTER VOLTAGE : V

Ic Max (Pulse)

DC

Pw=8ms

Fig.9 Safe operating area

(2SD1381F)

Ta=45˚C
Single
non-repetitive
pulse

CE

(V)