Page 1
Po wer Transistors
B
E
C
2SD1261, 2SD1261A
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB938 and 2SB938A
Features
■
●
High foward current transfer ratio h
●
High-speed switching
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SD1261
2SD1261A
2SD1261
2SD1261A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
Rank classification
FE2
Symbol
2SD1261
2SD1261A
2SD1261
2SD1261A
2SD1261
2SD1261A
V
V
V
I
CP
I
C
P
C
T
j
T
stg
CBO
CEO
EBO
C
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
FE
=25˚C)
C
Ratings
60
80
60
80
5
8
4
40
1.3
150
–55 to +150
=25˚C)
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 3V, IC = 0.5A
VCE = 3V, IC = 3A
VCE = 3V, IC = 3A
IC = 3A, IB = 12mA
IC = 5A, IB = 20mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 3A, IB1 = 12mA, IB2 = –12mA,
VCC = 50V
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
Internal Connection
10.0±0.310.5min.
10.0±0.3
4.4±0.5
2.0 1.5±0.1
2.0
1000
1000
8.5±0.2
6.0±0.5
5.08±0.5
213
8.5±0.2
6.0±0.3
5.08±0.5
123
min
60
80
1.5max.
0.8±0.1
2.54±0.3
0.8±0.1
2.54±0.3
+0
typ
0.5
–0.4
1.5
20
4
1
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Rank R Q P
h
1000 to 2500 2000 to 5000
FE2
4000 to 10000
Unit: mm
3.4±0.3
1.0±0.1
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
–0.2
+0.4
3.0
4.4±0.5
0 to 0.4
max
200
200
500
500
2
10000
2.5
2
4
14.7±0.5
Unit
µA
µA
mA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SD1261, 2SD1261A
PC—Ta IC—V
50
)
W
(
(1)
40
C
30
20
10
(2)
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
100
V
(
30
CE(sat)
10
3
TC=100˚C
1
–25˚C
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(P
=1.3W)
C
V
CE(sat)—IC
IC/IB=250
Collector current IC (A
)
25˚C
)
CE
10
8
)
A
(
C
6
4
Collector current I
2
0
0108264
IB=4.0mA
T
3.5mA
3.0mA
Collector to emitter voltage VCE (V
hFE—I
C
5
10
FE
4
10
TC=100˚C
3
10
25˚C
–25˚C
2
10
Forward current transfer ratio h
10
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
=25˚C
C
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
VCE=3V
IC—V
BE
10
8
)
A
(
C
Collector current I
)
6
4
2
0
TC=100˚C
03.20.8 2.41.6
Base to emitter voltage VBE (V
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
0.1 1 10 1000.3 3 30
)
Collector to base voltage VCB (V
25˚C
CB
–25˚C
VCE=3V
IE=0
f=1MHz
T
=25˚C
C
)
)
Area of safe operation (ASO) R
100
30
)
I
CP
10
A
(
I
C
C
3
1
0.3
0.1
Collector current I
0.03
0.01
1 10 100 10003 30 300
300ms
Non repetitive pulse
=25˚C
T
C
t=10ms
1ms
2SD1261
2SD1261A
Collector to emitter voltage VCE (V
)
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
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