Datasheet 2SD1163A, 2SD1163 Datasheet (HIT)

Page 1
2SD1163, 2SD1163A
Application
TV horizontal deflection output
Outline
TO-220AB
Silicon NPN Triple Diffused
1. Base
2. Collector
1
2
3
(Flange)
Page 2
2SD1163, 2SD1163A
Absolute Maximum Ratings (Ta = 25°C)
Rating
Item Symbol 2SD1163 2SD1163A Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector peak current I Collector surge current I Collector power dissipation PC*
CBO
CEO
EBO
C
C (peak)
C (surge)
1
Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
300 350 V 120 150 V 66V 77A 10 10 A 20 20 A 40 40 W
2SD1163 2SD1163A
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector cutoff current I
CBO
——5 ———mAVCB = 300 V, IE = 0 —————5 mAVCB = 350 V, IE = 0
Collector to emitter
V
(BR)CEO
120 150 V IC = 10 mA, RBE =
breakdown voltage Emitter to base
V
(BR)EBO
6——6——VIE = 10 mA, IC = 0
breakdown voltage DC current transfer ratio h Collector to emitter
V
FE
CE (sat)
25 25 VCE = 5 V, IC = 5 A* — 2.0 1.0 V IC = 5 A, IB = 0.5 A*
saturation voltage Base to emitter
V
BE (sat)
1.2 1.2 V IC = 5 A, IB = 0.5 A*
saturation voltage Fall time t
f
0.5 0.5 µsICP = 3.5 A,
I
= 0.45 A
B1
Note: 1. Pulse test.
1
1
1
2
Page 3
2SD1163, 2SD1163A
Maximum Collector Dissipation
Curve
60
(W)
C
40
20
Collector power dissipation P
0 50 100 150
Case temperature T
(°C)
C
Typical Output Characteristics
1.0 12
0.8
(A)
C
0.6
0.4
Collector current I
0.2
10
8
2 mA
I
TC = 25°C
6
4
= 0
B
024
Collector to emitter voltage V
CE
(V)
50
Area of Safe Operation
(A)
C
30
10
(40 V, 20 A)
For Picture Tube Arcing
3
1.0
0.3
Collector current I
0.01
(120 V, 0.9 A)
2SD1163
(150 V, 0.5 A)
2SD1163A
(350 V, 5 mA)
3010 100 300 1,000
Collector to emitter voltage V
CE
(V)
DC Current Transfer Ratio
vs. Collector Current
500
VCE = 5 V
FE
200
100
50
TC = 75°C
25°C
–25°C
20
10
DC current transfer ratio h
5
0.1
1086
0.2 0.5 1.0 2 10 Collector current I
C
5
(A)
3
Page 4
2SD1163, 2SD1163A
Collector to Emitter Saturation Voltage
(V)
3
CE(sat)
2
1
0
Collector to emitter saturation voltage V
0.1 0.2 0.5 1.0 1052
vs. Collector Current
IC/IB = 10
TC = –25°C, 25°C
Collector current I
C
75°C
(A)
Base to Emitter Saturation Voltage
1.5
(V)
BE(sat)
1.0
0.5
0
Base to emitter saturation voltage V
0.1 0.2 2 101.0 50.5
vs. Collector Current
IC/IB= 10
TC = –25°C
25°C
Collector current I
75°C
C
(A)
4
Page 5
11.5 MAX
Unit: mm
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
1.27
2.54 ± 0.5
10.16 ± 0.2
9.5
8.0
φ 3.6
-0.08
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
+0.2
6.4
–0.1
+0.1
4.44 ± 0.2
1.26 ± 0.15
2.7 MAX
14.0 ± 0.5 15.0 ± 0.3
0.5 ± 0.1
Hitachi Code JEDEC EIAJ Weight
(reference value)
TO-220AB Conforms Conforms
1.8 g
Page 6
Cautions
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
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