Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1157
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·High DC Current Gain : h
= 250V(Min.) @IC= 0.5A
FE
·Low Collector Saturation Voltage
·High Reliability
APPLICATIONS
·Switching regulators
·DC-DC converter
·Solid sate relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
= 50V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 10 V
Collector Current-Continuous 4 A
B Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
25 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance, Junction to Case 5.0 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1157
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE
V
B E
I
CBO
I
EBO
h
(sat)
(sat)
FE
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 50 V
Collector-Emitter Sustaining Voltage IC= 1A; IB= 0 B 50 V
Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 80 V
Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 10 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA B 0.5 V
Base-Emitter Saturation Voltage IC= 1A; IB= 50mA B 1.5 V
Collector Cutoff Current VCB= 80V; IE= 0 100 μA
Emitter Cutoff Current VEB= 10V; IC= 0 100 μA
DC Current Gain IC= 0.5A; VCE= 5V 250
Switching times
t
on
t
stg
t
f
isc Website：www.iscsemi.cn
Turn-on Time 0.5 μs
I
= 2A, IB1= -IB2= 0.2A;
Storage Time 3.0 μs
Fall Time
C
= 5Ω; PW= 20μs; Duty≤2%
R
L
2
0.8 μs
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