Page 1
Transistor
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
2SD1149
Silicon NPN epitaxial planer type
For low-frequency amplification
Features
■
●
High foward current transfer ratio hFE.
●
Low collector to emitter saturation voltage V
●
High emitter to base voltage V
●
Mini type package, allowing downsizing of the equipment and
EBO
.
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
100
100
15
50
20
200
150
–55 ~ +150
CE(sat)
.
Unit
V
V
V
mA
mA
mW
˚C
˚C
Unit: mm
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package
Marking symbol : 1V
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*1
h
Rank classification
FE1
Rank R S
h
FE
Marking Symbol 1VR 1VS
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
f
T
400 ~ 800 600 ~ 1200
Conditions
VCB = 60V, IE = 0
VCE = 60V, IB = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
min
100
100
15
400
typ
0.05
100
max
100
1
1200
0.2
Unit
nA
µA
V
V
V
V
MHz
1
Page 2
Transistor
2SD1149
PC — Ta IC — V
240
)
mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
25˚C
Ta=75˚C
–25˚C
Collector current IC (mA
)
C
IC/IB=10
)
CE
80
70
)
60
mA
(
C
50
40
30
20
Collector current I
10
0
012108264
I
Collector to emitter voltage VCE (V
hFE — I
C
1800
FE
1500
1200
900
600
300
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
Ta=25˚C
=100µA
B
80µA
60µA
50µA
40µA
30µA
20µA
10µA
)
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
02.01.60.4 1.20.8
)
Base to emitter voltage VBE (V
200
)
160
MHz
(
T
120
80
40
Transition frequency f
0
– 0.1 –1 –10 –100– 0.3 –3 –30
IC — V
BE
25˚C
Ta=75˚C
–25˚C
fT — I
E
Emitter current IE (mA
VCE=10V
VCB=10V
Ta=25˚C
)
)
)
pF
(
Cob — V
6
5
ob
4
3
2
1
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
mV
(
Noise voltage NV
)
NV — I
C
100
VCE=10V
G
=80dB
V
Function=FLAT
Ta=25˚C
80
60
40
20
0
0.01 0.03 0.1 0.3 1
Rg=100kΩ
22kΩ
5kΩ
Collector current IC (mA
NV — V
100
Rg=100kΩ
80
)
mV
(
60
40
Noise voltage NV
20
0
1 3 10 30 100
)
Collector to emitter voltage VCE (V
22kΩ
5kΩ
CE
IC=1mA
=80dB
G
V
Function=FLAT
Ta=25˚C
)
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