Page 1
2SD1140
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1140
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
• High DC current gain: h
• Low saturation voltage: V
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Base current I
Collector power dissipation P
Junction temperature T
Storage temperature range T
Equivalent Circuit
= 4000 (min) (VCE = 2 V, IC = 150 mA)
FE
CE (sat)
(Ta = 25°C)
= 1.5 V (max) (IC = 1 A, IB = 1 mA)
CBO
CEO
EBO
C
B
C
j
stg
30 V
30 V
10 V
1.5 A
50 mA
900 mW
150 °C
−55 to 150 °C
Unit: mm
JEDEC TO-92MOD
JEITA ―
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
COLLECTOR
BASE
EMITTER
1
2003-02-04
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2SD1140
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
Emitter cut-off current I
Collector-emitter breakdown voltage V
DC current gain hFE VCE = 2 V, IC = 150 mA 4000 ― ―
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
Turn-on time ton ― 0.2 ―
Switching time
Storage time t
Fall time t
(Ta = 25°C)
VCB = 30 V, IE = 0 ― ― 10 µA
CBO
VEB = 10 V, IC = 0 ― ― 10 µA
EBO
(BR) CEO
CE (sat) IC
IC = 1 A, IB = 1 mA ― 2.2 V
BE (sat)
― 0.6 ―
stg
f
IC = 10 mA, IB = 0 30 ― ― V
= 1 A, IB = 1 mA ― 1.5 V
B2
I
Input
20 µs
B1
I
= −IB2 = 1 mA, duty cycle ≤ 1%
I
B1
Output
15 Ω
VCC = 15 V
― 0.3 ―
Marking
µs
D1140
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
Product No.
Lot No.
2
2003-02-04
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2SD1140
600
500
400
300
200
100
0
0
Common emitter
Ta = 25°C
1 2 3
Collector-emitter voltage VCE (V)
(mA)
C
Collector current I
600
500
400
300
200
100
0
0
Common emitter
Ta = −50°C
1 2 3
Collector-emitter voltage VCE (V)
(mA)
C
Collector current I
10
5
3
(V)
(sat)
CE
V
1
0.5
0.3
Ta = −50°C
100
25
Collector-emitter saturation voltage
0.1
0.003
Collector current IC (A)
I
C
I
C
V
CE (sat)
– VCE
– VCE
– IC
60
50
40
30
20
IB = 10 µA
0
4 6
5
160
140
120
100
80
60
40
IB = 20 µA
0
4 6
5
Common emitter
IC/IB = 1000
0.3 1 0.01 0.03 0.1
(mA)
C
Collector current I
100000
50000
30000
FE
10000
5000
3000
DC current gain h
1000
(A)
C
Collector current I
600
500
400
300
200
100
500
300
0.003
1.0
0.8
0.6
0.4
0.2
0
0
0
0
I
– VCE
C
Common emitter
Ta = 100°C
1 2 3
Collector-emitter voltage VCE (V)
35
30
25
20
15
10
IB = 5 µA
0
4 6
h
– IC
FE
Common emitter
VCE = 2 V
Ta = 100°C
25
−50
0.01 0.03 0.1 0.3 1
Collector current IC (A)
I
– VBE
C
Common emitter
VCE = 2 V
Ta = 100°C
0.4 0.8 1.6
Base-emitter voltage VBE (V)
25
−50
1.2 2.0
5
2.4
3
2003-02-04
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2SD1140
(V)
BE (sat)
V
10
0.5
0.3
5
3
1
Ta = −50°C
25
100
Base-emitter saturation voltage
0.1
0.002 0.1 1
Collector current IC (A)
V
BE (sat)
– IC
Common emitter
IC/IB = 1000
1.0
0.8
(W)
C
0.6
0.4
3 0.3 0.01 0.03
0.2
Collector power dissipation P
0
20 40 80 100 140 60 120
0
Ambient temperature Ta (°C)
3000
IC max (pulsed)*
1000
500
(mA)
300
C
100
Safe Operating Area
IC max
(continuous)
100 µs*
1 ms*
10 ms*
300 ms*
DC operation
(Ta = 25°C)
10 µs*
2 s*
Collector current I
50
*: Single nonrepetitive pulse
30
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
10
0.5
1 3 10 30
Collector-emitter voltage VCE (V)
V
CEO
max
P
– Ta
C
160
4
2003-02-04
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2SD1140
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
5
2003-02-04
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