Datasheet 2SD1138 Datasheet (HIT)

2SD1138

Silicon NPN Triple Diffused

Application

Low frequency high voltage power amplifier TV vertical deflection output complementary pair with
2SB861

Outline

TO-220AB

1. Base

2. Collector

1

2

3

(Flange)

3. Emitter

2SD1138

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Rating Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
Collector power dissipation P

CBO

CEO

EBO

C

C (peak)

C

PC*

1

Junction temperature Tj 150 °C
Storage temperature Tstg –45 to +150 °C

Note: 1. Value at TC = 25°C.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown

V

(BR)CEO

voltage
Emitter to base breakdown

V

(BR)EBO

voltage
Collector cutoff current I
DC current transfer ratio h

Collector to emitter saturation

CBO

h
V

FE1

FE2

CE (sat)

voltage
Base to emitter voltage V

BE

Collector output capacitance Cob — 20 — pF VCB = 100 V, IE = 0, f = 1 MHz
Note: 1. The 2SD1138 is grouped by h

2. Pulse test.

150 — — V IC = 50 mA, RBE = ∞

6——VI

——1 µAVCB = 120 V, IE = 0

1

*

60 — 320 VCE = 4 V, IC = 50 mA
60 — — VCE = 10 V, IC = 500 mA*
— — 3.0 V IC = 500 mA, IB = 50 mA*

— — 1.0 V VCB = 4 V, IC = 50 mA

as follows.

FE1

200 V
150 V
6V
2A
5A

1.8 W
30 W

= 5 mA, IC = 0

E

2

2

BCD

60 to 120 100 to 200 160 to 320

2

Maximum Collector Dissipation Curve

40

2SD1138

Area of Safe Operation

10

30

20

T

C

10

1.8 W

Collector power dissipation Pc (W)

Ta

0 50 100 150 200

Ambient temperature Ta (°C)

Case temperature T

Typical Output Characteristics

1.0
TC = 25

°C

10

9
8

0.8

(A)

C

0.6

7
6
5

4

0.4

3
2

Collector current I

0.2

1 mA

IB = 0

0

246 108

Collector to emitter voltage VCE (V)

(°C)

C

5

(A)

C

2

IC
Continuous

1.0

0.5

(15 V, 2 A)

(max)

DC Operation (T

C

= 25°C)

(60 V, 0.4 A)

0.2

Collector current I

0.1

0.05

(150 V, 65 mA)

52 10 20 50 100 200

Collector to emitter voltage VCE (V)

Typical Transfer Characteristics

1,000

VCE = 4 V

500
200

(mA)

C

100

50
20

10

5

Collector current I

TC = 75°C

25

–25

2
1

0 0.2 0.4 0.6 0.8 1.0

Base to emitter voltage V

BE

(V)

3

2SD1138

500

VCE = 4 V

FE

200

100

50

20

DC current transfer ratio h

10

DC Current Transfer Ratio

vs. Collector Current

TC = 75°C

25

–25

(V)

(sat)
CE

Collector to Emitter Saturation Voltage

vs. Collector Current

0.5
IC = 10 I

B

0.2

TC = 75°C

0.1

0.05

–25

25

0.02

0.01

5

10 20 50 100 200 500 1,000 2,000

Collector current I

(mA)

C

0.005
10 20 50 100 200 500 1,000 2,000

Collector to emitter saturation voltage V

Collector current I

(mA)

C

4

11.5 MAX

Unit: mm

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

1.27

2.54 ± 0.5

10.16 ± 0.2

9.5

8.0

φ 3.6

-0.08

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

+0.2

6.4

–0.1

+0.1

4.44 ± 0.2

1.26 ± 0.15

2.7 MAX

14.0 ± 0.5 15.0 ± 0.3

0.5 ± 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

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