Datasheet 2SD1135 Datasheet (HIT)

Page 1
2SD1135
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB859
Outline
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector peak current I Collector power dissipation PC* Junction temperature Tj 150 °C Storage temperature Tstg –45 to +150 °C
Note: 1. Value at TC = 25°C.
CBO
CEO
EBO
C
C(peak)
1
100 V 80 V 5V 4A 8A 40 W
Page 2
2SD1135
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CEO
voltage Emitter to base breakdown
V
(BR)EBO
voltage Collector cutoff current I DC current transfer ratio h
Base to emitter voltage V Collector to emitter saturation
h
V
CBO
FE1
FE2
BE
CE(sat)
voltage Gain bandwidth product f
T
Collector output capacitance Cob 40 pF VCB = 20 V, IE = 0, f = 1 MHz Notes: 1. The 2SD1135 is grouped by h
2. Pulse test.
BC
60 to 120 100 to 200
80 V IC = 50 mA, RBE =
5——VI
= 10 µA, IC = 0
E
0.1 mA VCB = 80 V, IE = 0
1
*
60 200 VCE = 5 V, IC = 1 A* 35 VCE = 5 V, IC = 0.1 A* — 1.5 V VCE = 5 V, IC = 1 A* ——2VI
= 2 A, IB = 0.2 A*
C
10 MHz VCE = 5 V, IC = 0.5 A*
as follows.
FE1
2
2
2
2
2
Maximum Collector Dissipation Curve
60
40
20
Collector power dissipation Pc (W)
0 50 100 150
Case temperature T
(°C)
C
Area of Safe Operation
(A)
C
1.0
5
IC
(Continuous)
max
2
(10 V, 4 A)
DC Operation
(T
C
= 25°C)
0.5
0.2
Collector current I
0.1 (80 V, 0.06 A)
0.05 1 2 5 10 20 50 100
Collector to emitter voltage V
(33 V, 1.2 A)
(V)
CE
2
Page 3
2SD1135
5
T
= 25
C
4
(A)
C
3
2
Collector current I
1
0
Collector to emitter voltage VCE (V)
1,000
FE
300
100
Typical Output Characteristics
PC = 40 W
°C
160
140
100
80 60
40
20 mA
IB = 0
246810
DC Current Transfer Ratio
vs. Collector Current
TC = 75°C
25
VCE = 5 V
–25
Typical Transfer Characteristics
10
3
(A)
C
1.0
VCE = 5 V
0.3
25
0.1
Collector current I
0.03
T
= 75°C
C
–25
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base to emitter voltage V
BE
(V)
Collector to Emitter Saturation Voltage
vs. Collector Current
(V)
10
(sat) CE
3
IC = 10 I
1.0
B
TC = 75°C
30
10
DC current transfer ratio h
3
1
0.01 0.03 0.1 0.3 1.0 3 10 Collector current IC (A)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.03 0.1 0.3 1.0 3 10 Collector current I
C
25
(A)
–25
3
Page 4
11.5 MAX
Unit: mm
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
1.27
2.54 ± 0.5
10.16 ± 0.2
9.5
8.0
φ 3.6
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
+0.1
-0.08
+0.2
6.4
–0.1
4.44 ± 0.2
1.26 ± 0.15
2.7 MAX
14.0 ± 0.5 15.0 ± 0.3
0.5 ± 0.1
Hitachi Code JEDEC EIAJ Weight
(reference value)
TO-220AB Conforms Conforms
1.8 g
Page 5
Cautions
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2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
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