Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1117
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Low Collector-Emitter Saturation Voltage-
: V
CE(sat)
·Wide Area of Safe Operation
·Complement to Type 2SB850
APPLICATIONS
·Designed for audio amplifier, series regulators and general
purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(T
= 40V(Min)
= 1.2V(Max) @IC= 5A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 40 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 10 A
B Base Current-Continuous 2 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
50 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance, Junction to Case 2.5 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD1117
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
V
B E
I
CBO
I
EBO
h
(sat)
(sat)
FE
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 40 V
Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 40 V
Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V
Collector Cutoff Current VCB= 40V; IE= 0 10 μA
Emitter Cutoff Current VEB= 7V; IC= 0 10 μA
DC Current Gain IC= 2A; VCE= 5V 60 240
isc Website：www.iscsemi.cn
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