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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1069
DESCRIPTION
·High Collector Current Capability
·High Collector Power Dissipation Capability
·Built-in Damper Diode
APPLICATIONS
·TV horizontal deflection output applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
stg
Collector-Base Voltage 300 V
Collector-Emitter Voltage 150 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 7 A
Collector Current-Peak 15 A
B Base Current-Continuous 2 A
Collector Power Dissipation
T
=25℃
C
j
a
Collector Power Dissipation
T
=25℃
C
Junction Temperature 150 ℃
Storage Ttemperature Range -55~150 ℃
1.75
40
W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD1069
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CES
h
FE
f
V
ECF
(sat)
(sat)
T
Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH 150 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 300 V
Emitter-Base Breakdown Voltage IE= 0.1A; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V
Collector Cutoff Current VCE= 250V; VBE= 0 1 mA
DC Current Gain IC= 5A ; VCE= 1.5V 10
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 18 MHz
C-E Diode Forward Voltage IF= 6A 1.8 V
t
f
Fall Time
I
CP
= 5A; I
B1(
end
= 0.5A
)
1.0
μs
isc Website：www.iscsemi.cn
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