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2SC732TM
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TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC732TM
LOW NOISE AUDIO AMPLIFIER APPLICATIONS
High Breakdomn Voltage : V
Excellent h
Linearity
FE
: hFE (IC = 0.1mA)/hFE (IC = 2mA) = 0.95 (Typ.)
Low Noise : NF (1) = 0.5dB (Typ.) (f = 100Hz)
: NF (2) = 0.2dB (Typ.) (f = 1kHz)
MAXIMUM RATINGS
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current IC 150 mA
Base Current IB 30 mA
Collector Power Dissipation PC 400 mW
Junction Temperature Tj 125 °C
Storage Temperature Range T
(Ta = 25°C)
CEO
= 50V
CBO
CEO
EBO
60 V
50 V
5 V
−55~125 °C
stg
Unit in mm
JEDEC TO−92
EIAJ SC−43
TOSHIBA 2–5F1B
Weight: 0.21g
000707EAA1
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury o
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction o
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energ
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this documen
shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed b
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION o
others.
• The information contained herein is subject to change without notice.
2001-01-11 1/4
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2SC732TM
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain hFE (Note) VCE = 6V, IC = 2mA 200 — 700
Collector-Emitter Saturation Voltage V
Base-Emitter Voltage VBE VCE = 6V, IC = 2mA — 0.65 — V
Transition Frequency fT VCE = 6V, IC = 1mA — 150 — MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz — 2.0 — pF
Noise Figure NF (1)
Noise Figure NF (2)
(Ta = 25°C)
VCB = 60V, IE = 0 — — 0.1 µA
CBO
VEB = 5V, IC = 0 — — 0.1 µA
EBO
IC = 10mA, IB = 1mA — — 0.3 V
CE (sat)
= 6V, IC = 0.1mA, f = 100Hz,
V
CE
R
= 10kΩ
G
= 6V, IC = 0.1mA, f = 1kHz,
V
CE
R
= 10kΩ
G
— 0.5 6 V
— 0.2 3 V
Note: hFE Classification GR: 200~400, BL: 350~600
2001-01-11 2/4
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