Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
−55 to +150
Rev.A 1/3
zExternal dimensions (Units : mm)
2.8
TSMT3
(1)Base
(2)Emitter
(3)Collector
1.6
)
1
(
0.95
1.9
0.95
)
2
(
0.16
0.3 0.6
0 0.1
Abbreviated symbol : VL
LimitsUnit
60
60
6
2
4
500
150
V
V
V
A
A
mW
°C
∗
1
∗
2
°C
0.4
)
2.9
3
(
0.85
0.7
1.0MAX
Each lead has same dimensions
Page 2
Transistor
zElectrical characteristics (Ta=25°C)
ParameterSymbol
Collector−base breakdown voltage
Collector−emitter breakdown voltage
Emitter−base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector−emitter staturation voltage
BV
BV
BV
I
I
V
CE(sat)
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
∗1 Non repetitive pulse
∗2 See switching charactaristics measurement circuits
zh
FE RANK
QR
120-270180-390
zElectrical characteristic curves
10
1
0.1
0.01
COLLECTOR CURRENT : IC (A)
Single non
repoetitive pulse
0.001
COLLECTOR EMITTER VOLTAGE : VCE (V)
100ms
DC
1100.010.1100
Fig.1 Safe operating area
1000
FE
V
CE
100
=2V
1ms
10ms
Ta=25°C
VCE=5V
V
CE
=3V
CBO
CEO
EBO
CBO
EBO
FE
h
fT
C
ob
T
on
T
stg
Tf
1000
100
SWITCHING TIME (ns)
10
0.010.1
10
1
(sat)(V)
CE
Typ.Max.
Min.
60−−
60
120
−−
−
6
−
−
−
200
−
200
−
10
50
−
120
−
−
35
−
−
1.0
−
1.0
500
−−
390
−
−
−
−
−
Tstg
Tf
Ton
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
Ta=125°C
1
IC/IB=10/1
Unit
V
V
V
µA
µA
mV
MHz
pF
ns
ns
ns
Ta=25°C
V
I
2SC5866
Conditions
I
C
=
100µA
I
C
=
1mA
E
=
100µA
I
V
CB
=
40V
EB
=
4V
V
I
C
=
1A, I
V
CE
=
2V, I
V
CE
=
10V, I
CB
=
10V, I
V
C
=
2A,
I
B1
=
200mA
I
B2
= −
200mA
I
CC
25V
V
CC
=25V
C/IB
=10/1
10
∗1
B
=
0.1A
C
=
100mA
E
= −
100mA, f=10MHz
E
=
0mA, f=1MHz
∗2
∗1
1000
Ta=125°C
FE
100
Ta= −40°C
10
DC CURRENT GAIN : h
1
0.0010.010.1101
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector
current
10
1
(sat)(V)
CE
Ta=25°C
Ta=25°C
VCE=2V
10
DC CURRENT GAIN : h
1
0.0010.010.1101
COLLECTOR CURRENT : I
Fig.4 DC current gain vs. collector
current
C
(A)
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.0010.010.1
COLLECTOR CURRENT : I
Fig.5 Collector-emitter saturation voltage
vs. Collector Current
Ta=25°C
Ta= −40°C
C
(A)
101
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
0.0010.10.01101
Fig.6 Collector-emitter saturation voltage
IC/IB=20/1
COLLECTOR CURRENT : I
vs. collector current
IC/IB=10/1
C
(A)
Rev.A 2/3
Page 3
Transistor
10
Ta= −40°C
1
) (V)
(sat
BE
BASE EMITTER SATURATION
VOLTAGE : V
Ta=125°C
0.1
0.01
0.0010.010.1101
COLLECTOR CURRENT : IC (A)
Fig.7 Base-emitter saturation voltage
vs. collector current
Ta=25°C
100
pF)
oB (
IC/IB=10/1
Ta=25°C
f=1MHz
10
(A)
C
1
Ta=125°C
0.1
COLLECTOR CURRENT : I
0.01
00.511.5
BASE TO EMITTER VOLTAGE : V
Fig.8 Ground emitter propagation
characteristics
Ta=25°C
Ta= −40°C
VCE=2V
BE
(V)
1000
(MHz)
T
100
10
TRANSITION FREQUENCY : F
1
EMITTER CURRENT : I
Fig.9 Transition frequency
2SC5866
Ta=25°C
CE
=10V
V
−10−1−0.1−0.01−0.001
E
(A)
10
1
COLLECTOR OUTPUT CAPACITANCE : C
COLLECTOR TO BASE VOLTAGE : V
CB (
1001010.1
V)
Fig.10 Collector output capacitance
zSwitching characteristics measurement circuits
V
IN
P
W
PW 50 S
Duty cycle 1%
Base current
waveform
90%
Collector current
waveform
I
B1
I
B2
10%
TonTstg Tf
RL=12.5Ω
I
C
I
B1
I
B2
I
C
VCC 25V
Rev.A 3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Page 5
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