Datasheet 2SC5865 Datasheet (ROHM) [ru]

Transistors

2SC5865

High voltage discharge, High speed switching

,

Low Noise (60V, 1A)

2SC5865

zFeatures

1) High speed switching. ( Tf : Typ. : 50ns at IC =

2) Low saturation voltage, typically.
(Typ. : 200mV

at IC

=

500mA, IB = 50mA)

3) Strong discharge power for inductive load and

capacitance load.

4) Low Noise.

5) Complements the 2SA2092.

zApplications
High speed switching, Low noise

zStructure
NPN silicon epitaxial planar transistor

zPackaging specifications

Taping

TL

3000

Type

2SC5865

Package
Code
Basic ordering unit (pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation
Junction temperature

Range of storage temperature

∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land

Symbol

V

CBO

V

CEO

EBO

V

I

C

I

CP

P

C

Tj

Tstg

1.0

A)

Limits Unit

60
60

6

1.0

2.0
500
150

−55 to +150

zDimensions (Unit : mm)

TSMT3

(1) Base
(2) Emitter
(3) Collector

V
V
V
A

∗1

A

∗2

mW

°C
°C

2.9

0.4

(3)

(2)

(1)

0.950.95

1.9

Abbreviated symbol : VU

1.0MAX

0.85

0.7

2.8

1.6

0

~

0.1

0.6

~

0.3

0.16

Each lead has same dimensions

1/4

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current
Emitter cut-off current
Collector-emitter saturatioin voltage
DC current gain
Transistor frequency
Collector output capacitance
Turn-on time
Storage time
Fall time

∗1 Non repetitive pulse
∗2 See switching characteristics measurement circuits

zhFE RANK

QR

120-270 180-390

BV
BV

BV

I
I

V

CE(sat)

Cob

tstg

CBO

EBO

h

fT

ton

FE

tf

CEO

CBO

EBO

Min.

Typ. Max. Unit Conditions
60
60

6

−

−

−

120

−

−

−

−

−

−−

−−

−

1.0

−

1.0

−

200 500

390

−−

250

10
50

130

50

V

C

=1mA

I

C

=100µA

I

V
V

E

µA
µA

mV

pF

ns
ns
ns

I
V
V

C

I
V
V
V

C

I

B1

I

B2

I
V

=100µA

CB

EB

=4V

=500mA, IB=50mA

CE

CE

=10V, IE= −100mA, f=10MHz

CB

=10V, IE=0mA, f=1MHz

=1A,

=100mA
= −100mA

CC

−

MHz

−

−

−

−

−

=40V

=2V, IC=100mA

∗2

25V

2SC5865

∗1

2/4

Transistors

zElectrical characteristics curves

200

160

(mA)

C

120

80

40

COLLECTOR CURRENT : I

0

COLLECTOR TO EMITTER VOLTAGE : V

Fig.1 Typical output characteristics

1000

100

10

DC CURRENT GAIN : hFE

1

0.001 0.01 0.1 101

Ta=125°C

Ta= −40°C

COLLECTOR CURRENT : IC (A)

Ta=25°C

Fig.4 DC current gain
vs. collector current ( Ι )

10

1

(sat)(V)

CE

IC/IB=100/1

0.1

VOLTAGE : V

COLLECTOR SATURATION

IC/IB=10/1

0.01

0.001 0.10.01 101
COLLECTOR CURRENT : I

Fig.7 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )

3/4

IB=500µA

IC/IB=20/1

C

450µA
400µA

350µA
300µA
250µA
200µA
150µA
100µA

50µA

0µA

CE

VCE=2V

Ta=25°C

(A)

512340

(V)

10

DC

10ms

500ms

100ms

(A)

C

1

0.1

0.01

COLLECTOR CURRENT : I

Single non repetitive pulse

0.001

0.1 1

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.2 Safe operating area

1000

100

10

DC CURRENT GAIN : hFE

1

0.001 0.01 0.1 101
COLLECTOR CURRENT : IC (A)

Fig.5 DC current gain
vs. collector current ( ΙΙ )

VCE=2V

10

(sat) (V)

BE

1

BASE EMITTER SATURATION

VOLTAGE : V

0.1

0.001 0.01 0.1 101

Fig.8 Base-emitter saturation voltage

Ta= −40°C

Ta=125°C

COLLECTOR CURRENT : IC (A)

vs. collector current

1ms

10

Ta=25°C

VCE=5V

VCE=3V

Ta=25°C

1000

500µs

100µs

100

Ton

COLLECTOR CURRENT : IC (A)

100

SWITCHING TIME (ns)

10

0.01 0.1

Fig.3 Switching Time

10

1

(sat)(V)

CE

0.1

VOLTAGE : V

COLLECTOR SATURATION

0.01

0.001 0.01 0.1

Ta=125°C

Ta= −40°C

COLLECTOR CURRENT : I

Fig.6 Collector-emitter saturation voltage
vs. collector current ( Ι )

IC/IB=10/1

1000

(MHz)

T

100

10

TRANSITION FREQUENCY : f

1

0.001 0.01 0.1 101

EMITTER CURRENT : I

Fig.9 Transition frequency

2SC5865

Ta=25°C

CC

=25V

V

C/IB

=10/1

I

Tstg

Tf

1

Ta=25°C

IC/IB=10/1

C

(A)

Ta=25

CE

V

E

(A)

=10V

10

101

°C

Transistors

C
W

B
W

V

100

(pF)

10

Ta=25°C

f=1MHz

(A)

C

2SC5865

10

1

Ta=125°C

0.1

1

COLLECTOR OUTPUT CAPACITANCE : Cob

0.1 10 1001

COLLECTOR TO BASE VOLTAGE : V

Fig.10 Collector output capacitance

CB

(V)

COLLECTOR CURRENT : I

0.01
0 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.40.1 0.2 0.3 0.4 1 1.5

BASE TO EMITTER VOLTAGE : V

Fig.11 Ground emitter propagation

zSwitching characteristics measurement circuits

V

IN

P

W

PW 50 S
Duty cycle 1%

ASE CURRENT

AVEFORM

90%

OLLECTOR CURRENT

AVEFORM

characteristics

I

B1

I

B2

10%

Ton Tstg Tf

Ta=25°C

Ta=−40°C

I

BE

RL=25Ω

I

C

I

B1

B2

I

C

(V)

VCC 25

4/4

Appendix

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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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Notes

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Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan

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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
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Appendix1-Rev1.1