Datasheet 2SC5824 Datasheet (ROHM) [ru]

Transistor

Power transistor (60V, 3A)

2SC5824

zFeatures

1) High speed switching. (Tf : Typ. : 30ns

at IC = 3A)

2) Low saturation voltage, typically (T yp . : 200mV
I

B = 200mA)

3) Strong discharge power for inductive load and
capacitance load.

4) Complements the 2SA2071.

zApplications

NPN Silicon epitaxial planar transistor

zStructure
Low frequency amplifier
High speed switching

zPackaging specifications

Taping

T100
1000

Type

2SC5824

Package
Code

Basic ordering unit
(pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Power dissipation

Junction temperature
Range of storage temperature

∗

1 Pw=100ms

∗

2 Each terminal mounted on a recommended land.

∗

3 Mounted on a 40x40x0.7(mm) ceramic substrate

Symbol

CBO

V
V

CEO

EBO

V

I

C

I

CP

P

C

P

C

Tj

Tstg

at IC = 2A,

−55~+150

zDimensions (Unit : mm)

MPT3

(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Sourse)

Limits Unit

60
60

6
3
6

500

2.0

150

mW

Each lead has same dimensions

Abbreviated symbol : UP

V
V
V
A

∗1

A

∗2

∗3

W

°C
°C

2SC5824

Rev.B 1/3

Transistor

zElectrical characteristics (T a=25°C)

Parameter Symbol

Collector−base breakdown voltage
Collector−emitter breakdown voltage

Emitter−base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector−emitter staturation voltage
DC current gain

Transition frequency
Collector output capacitance

Turn-on time
Storage time
Fall time

∗1 Non repetitive pulse
∗2 See switching charactaristics measurement circuits

zh

FE RANK

QR

120-270 180-390

zElectrical characteristic curves

10

Ta=125°C

(A)

C

1

Ta=100°C

0.1

COLLECTOR CURRENT : I

0.01
0 0.5 1 1.5 2

BASE TO EMITTER VOLTAGE : V

Fig.1 Ground emitter propagation

characteristics

10

1

sat)(V)

(

CE

Ta= −40°C

Ta=25°C

BVCBO 60 −−
BV

BV

VCE(sat)

VCE=2V

BE

(V)

Ta=25°C

Typ. Max.

Min.

−−

−

6

−

−

−

200

−

200

−

20
50

−

150

−

−

30

−

−

1.0

−

1.0

500

−−

390

−

−

−

−

−

ICBO
IEBO

hFE

fT

Cob

ton

stg

t

tf

CEO

EBO

60

120

1000

100

10

DC CURRENT GAIN : hFE

1

0.001 0.01 0.1 101
COLLECTOR CURRENT : I

Fig.2 DC current gain vs. collector

current

10

)(V)

1

(sat

CE

Ta=100°C

V

V

CE

Unit

mV

MHz

CE

=3V

=2V

C

(A)

IC/IB=10/1

Ta=125°C

Conditions

V

I

C=100µA

I

C=1mA

V
V

I

E=100µA

V

CB=40V

µA

EB=4V

V

µA

I

C=2A, IB=200mA

CE=2V, IC=100mA

V
V

CE=10V, IE= −100mA, f=10MHz

pF

V

CB=10V, IE=0mA, f=1MHz

ns

C=3A,

I

B1=300mA

I

ns

B2= −300mA

ns

Ta=25°C

VCE=5V

I
V

CC

∗2

25V

1000

FE

100

10

DC CURRENT GAIN : h

1

0.001 0.01 0.1 101

Fig.3 DC current gain vs. collector

10

(sat) (V)

BE

1

2SC5824

∗1

Ta= −40°C

COLLECTOR CURRENT : IC (A)

current

Ta=25°C

Ta=25°C

Ta=100°C

Ta= −40°C

∗1

Ta=125°C

IC/IB=10/1

VCE=2V

0.1

IC/IB=20/1

VOLTAGE : V

COLLECTOR SATURATION

0.01

0.001 0.10.01 101
COLLECTOR CURRENT : I

Fig.4 Collector-emitter saturation voltage

vs. collector current

IC/IB=10/1

C

(

A)

0.1

VOLTAGE : V

COLLECTOR SATURATION

0.01

0.001 0.01 0.1
COLLECTOR CURRENT : I

Fig.5 Collector-emitter saturation voltage

vs. Collector Current

Ta=25°C

Ta= −40°C

C

(A)

101

BASE EMITTER SATURATION

VOLTAGE : V

Ta=100°C

0.1

0.001 0.01 0.1 101

COLLECTOR CURRENT : IC (A)

Fig.6 Base-emitter saturation voltage

vs. collector current

Ta=125°C

Rev.B 2/3

Transistor

1000

(MHz)

T

100

Ta=25°C

CE

=10V

V

2SC5824

100

(pF)

ob

10

Ta=25°C
f=1MHz

1000

tstg

100

ton

Ta=25°C
V

CC

=25V

C/IB

=10/1

I

10

TRANSITION FREQUENCY : F

1

EMITTER CURRENT : I

Fig.7 Transition frequency

−10−1−0.1−0.01−0.001

E

(A)

1

COLLECTOR OUTPUT CAPACITANCE : C

COLLECTOR TO BASE VOLTAGE : V

Fig.8 Collector output capacitance

10

(A)

1

C

0.1

0.01

COLLECTOR CURRENT : I

Single non repoetitive pulse

0.001

COLLECTOR EMITTER VOLTAGE : VCE (V)

100ms

DC

1100.1 100

10ms

Fig.10 Safe operating area

1ms

zSwitching characteristics measurement circuits

V

IN

SWITCHING TIME (ns)

10

1001010.1

CB

(V)

0.01 0.1

COLLECTOR CURRENT : IC (A)

tf

1

10

Fig.9 Switching Time

RL=8.3Ω

I

B1

I

C

P

W

PW 50 S

I

B2

VCC 25V

Duty cycle 1%

I

B1

B2

Base current
waveform

I

90%

I
Collector current
waveform

10%

ton tstg tf

C

Rev.B 3/3

Appendix

Notes

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Appendix1-Rev2.0