Datasheet 2SC5706-H Specification

Page 1
Ordering number : EN6912D
A
2SA2039/2SC5706
SANYO Semiconductors
DATA SHEET
PNP/NPN Epitaxial Planar Silicon Transistor
2SA2039/2SC5706
High-Current Switching Applications
Applications
• DC / DC converter, relay drivers, lamp drivers, motor drivers, fl ash
Features
• Adoption of FBET and MBIT processes
• Low collector-to-emitter saturation voltage
Specifi cations
Absolute Maximum Ratings
Collector-to-Base Voltage V Collector-to-Emitter Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I
Continued on next page.
Package Dimensions
7518-003 7003-003
6.5
5.0
( ): 2SA2039
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
CBO CES CEO
EBO C CP
unit : mm (typ)
2.3
1.5
Package Dimensions
2SA2039-E
0.5
2SC5706-E 2SC5706-H
High-speed switching • High allowable power dissipation
(--50)100 V (--50)100 V
(--)50 V
(--)6 V (--)5 A
(--)7.5 A
6.5
5.0
unit : mm (typ)
2.3
1.5
0.5
2SA2039-TL-E 2SC5706-TL-E 2SC5706-TL-H
7.07.5
0.85
0.7
0.6
1243
2.3 2.3
0.8
5.5
1.6
1.2
0.5
1 : Base 2 : Collector 3 : Emitter 4 : Collector
SANYO : TP
0.85
0.6
0.8
1243
2.3 2.3
5.5
7.0
2.5
0.5
1.2
0 to 0.2
1.2
1 : Base 2 : Collector 3 : Emitter 4 : Collector
SANYO : TP-F
Product & Package Information
• Package : TP • Package : TP-FA
JEITA, JEDEC :
Minimum Packing Quantity
SC-64, TO-251
:
500 pcs./bag
JEITA, JEDEC : Minimum Packing Quantity
SC-63, TO-252
:
700 pcs./reel
Marking (TP, TP-FA) Packing Type (TP-FA) : TL Electrical Connection
A2039 C5706
LOT No.LOT No.
TL
http://www.sanyosemi.com/en/network/
82912 TKIM/42512EA TKIM/62405EA MSIM TB-00001404/30101 TSIM TA-3232
(For PNP, the polarity is reversed.)
1
No.6912-1/10
2,4
3
Page 2
2SA2039/2SC5706
Continued from preceding page.
Parameter Symbol Conditions Ratings Unit
Base Current I Collector Dissipation P Junction Temperature Tj 150
Storage Temperature Tstg --55 to +150
B
C
Tc=25°C15W
(--)1.2 A
0.8 W
C
°
C
°
Electrical Characteristics
Parameter Symbol Conditions
Collector Cutoff Current I Emitter Cutoff Current I DC Current Gain h Gain-Bandwidth Product f Output Capacitance Cob VCB=(--)10V, f=1MHz (24)15 pF
Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage VBE(sat) VCE=(--)2V, IB=(--)100mA (--)0.89 (--)1.2 V
Collector-to-Base Breakdown Voltage V Collector-to-Emitter Breakdown Voltage V Collector-to-Emitter Breakdown Voltage V Emitter-to-Base Breakdown Voltage V Turn-On Time t Storage Time t Fall Time t
at T a=25°C
CBO EBO
FE T
VCE(sat)1 IC=(--)1A, IB=(--)50mA VCE(sat)2 IC=(--)2A, IB=(--)100mA
(BR)CBOIC
(BR)CESIC
(BR)CEOIC
(BR)EBOIE on stg f
VCB=(--)40V, IE=0A (--)1 VEB=(--)4V, IC=0A (--)1 VCE=(--)2V, IC=(--)500mA 200 560 VCE=(--)10V, IC=(--)500mA (360)400 MHz
=(--)10μA, IE=0A =(--)100μA, RBE=0 =(--)1mA, RBE=
=(--)10μA, IC=0A (--)6 V
See specifi ed Test Circuit.
Ratings
min typ max
(--115)90 (--195)135
(--255)160 (--430)240
(--50)100
Ω
(--50)100
(--)50 V
(30)35
(230)300
(15)20 ns
Switching Time Test Circuit
I
VR10
B1
I
B2
R
B
+
+
100μF 470μF
OUTPUT
25Ω
PW=20μs D.C.1%
INPUT
50Ω
Unit
μ
μ
mV mV
V V
ns ns
A A
VBE= --5V
VCC=25V
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
Ordering Information
Device Package Shipping memo 2SA2039-E TP 500pcs./bag 2SC5706-E TP 500pcs./bag 2SC5706-H TP 500pcs./bag Pb Free & Halogen Free 2SA2039-TL-E TP-FA 700pcs./reel 2SC5706-TL-E TP-FA 700pcs./reel 2SC5706-TL-H TP-FA 700pcs./reel Pb Free & Halogen Free
Pb Free
Pb Free
No.6912-2/10
Page 3
2SA2039/2SC5706
IC -- V
--80mA
CE
--70mA
--60mA
--5
--4
-- A C
--3
--90mA
--2
--100mA
--30mA
Collector Current, I
--1
0
0 --0.4 --0.8 --1.0 --1.2 --1.4
--20mA
--40mA
Collector-to-Emitter Voltage, VCE -- V
IC -- V
°
Ta=75
BE
C
C
C
°
°
25
--25
--4.0
--3.5
--3.0
-- A C
--2.5
--2.0
--1.5
--1.0
Collector Current, I
--0.5
0
0 --0.2 --0.4 --0.6 --0.8 --1.4--1.0 --1.2
Base-to-Emitter Voltage, VBE -- V
h
-- I
1000
7 5
Ta=75°C
3
FE
2
100
7 5
DC Current Gain, h
3 2
--25
25
°
°
FE
C
C
C
2SA2039
--50mA
--10mA
--5mA
IB=0mA
IT02974
2SA2039 VCE= --2V
IT00154
2SA2039 VCE= --2V
IC -- V
5
2SC5706
70mA
80mA
4
-- A C
90mA
3
CE
60mA
50mA
40mA
30mA
20mA
2
10mA
100mA
Collector Current, I
1
0
0 0.4 0.8 1.0 1.2 1.4
5mA
IB=0mA
Collector-to-Emitter Voltage, VCE -- V
IC -- V
C
°
Ta=75
25
BE
C
°
°
--25
C
4.0
3.5
3.0
-- A C
2.5
2.0
1.5
1.0
Collector Current, I
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE -- V
1000
FE
FE
7 5
3 2
Ta=75°C
--25°C
C
h
-- I
25°C
100
7 5
DC Current Gain, h
3 2
IT02975
2SC5706 VCE=2V
IT00155
2SC5706 VCE=2V
10
--0.01
--10000 7 5
3 2
--1000
(sat) -- mV
7
CE
5 3
2
--100 7
5 3
Collector-to-Emitter
Saturation Voltage, V
2
--10
--0.01 --0.1
325
73257 3257
Collector Current, IC -- A
VCE(sat) -- I
--1.0
IT00156
C
2SA2039 IC / IB=20
C
°
Ta=75
--25
23 57 23 57 23 57
Collector Current, IC -- A
C
°
C
°
25
--1.0 --10
IT02976
10
1000
(sat) -- mV
CE
100
Collector-to-Emitter
Saturation Voltage, V
10
0.01
0.01
7 5
3 2
7 5
3 2
--10--0.1
325
73257 3257
Collector Current, IC -- A
23 57
Collector Current, IC -- A
VCE(sat) -- I
C
°
Ta=75
C
°
--25
23 57
0.1
C
1.0
1.0
25
C
°
IT00157
2SC5706 IC / IB=20
23 57
IT02978
100.1
10
No.6912-3/10
Page 4
2SA2039/2SC5706
--10000 7
2SA2039
5
IC / IB=50
3 2
--1000
(sat) -- mV
7
CE
5 3
2
--100 7
5 3
Collector-to-Emitter
Saturation Voltage, V
2
--10
--0.01 --0.1
VCE(sat) -- I
Ta=75
C
°
25
23 57 23 57 23 57
C
C
°
C
°
--25
--1.0 --10
Collector Current, IC -- A
--10 7
5
3
(sat) -- V
2
BE
--1.0
Base-to-Emitter
Saturation Voltage, V
--0.1
--0.01 --0.1 --1.0 --10
Ta= --25
7 5
3 2
23 57 23 57 23 57
5 3
2
VBE(sat) -- I
C
°
C
°
75
Collector Current, IC -- A
Cob -- V
C
25°C
CB
IT02977
2SA2039 IC / IB=50
IT00162
2SA2039 f=1MHz
10000
7 5
3 2
1000
(sat) -- mV
7
CE
5 3
2
100
7 5
3
Collector-to-Emitter
Saturation Voltage, V
2
10
0.01 0.1
VCE(sat) -- I
23 57 23 57 23 57
C
C
°
Ta=75
C
°
--25
C
°
25
1.0 10
Collector Current, IC -- A
Ta= --25
75
°
VBE(sat) -- I
C
°
C
10
7 5
3
(sat) -- V
2
BE
1.0 7 5
3
Base-to-Emitter
Saturation Voltage, V
2
0.1
23 57 23 57 23 57
0.01 0.1 1.0 10
C
25°C
Collector Current, IC -- A
5 3
2
Cob -- V
CB
2SC5706 IC / IB=50
IT02979
2SC5706 IC / IB=50
IT00163
2SC5706 f=1MHz
100
7 5
3 2
10
7
Output Capacitance, Cob -- pF
5 3
2
23 757523752375
--0.1
Collector-to-Base Voltage, V
1000
7 5
3
-- MHz T
2
100
7 5
3 2
Gain-Bandwidth Product, f
10
57
--0.01
257 7 73
Collector Current, I
--1.0 --10 --100
CB
f
-- I
T
C
-- V
IT00164
2SA2039 VCE= --10V
253253
--0.1
--1.0 --10
-- A
C
IT00166
100
7 5
3 2
10
7
Output Capacitance, Cob -- pF
5 3
2
0.1
23 37737755
Collector-to-Base Voltage, V
1000
7 5
3
-- MHz T
2
100
7 5
3 2
Gain-Bandwidth Product, f
10
5
0.01
257 7 73
Collector Current, I
2
1.0
f
-- I
T
C
253253
0.1
C
25
-- V
5
IT00165
10
CB
2SC5706 VCE=10V
1.0 10
-- A
IT00167
100
No.6912-4/10
Page 5
2
ICP=7.5A
10
7 5
3
-- A
2
C
1.0 7 5
3 2
0.1 7
Collector Current, I
2SA2039 / 2SC5706
5
Tc=25°C
3
Single pulse
2
For PNP, the minus sign(--)is omitted
0.01
0.1
100ms
IC=5A
DC operation (Ta=25
1.0
Collector-to-Emitter Voltage, V
18
16 15 14
-- W C
12
10
A S O
10ms
DC operation (Tc=25
P
-- Tc
C
2SA2039/2SC5706
1ms
500
100
μ
s
μ
s
°
C)
°
C)
253725372537
10 100
-- V
CE
2SA2039 / 2SC5706
IT02980
1.0
0.9
0.8
-- W
0.7
C
0.6
0.5
0.4
0.3
0.2
Collector Dissipation, P
0.1 0
2006040 80 100 140120 160
Ambient Temperature, Ta -- °C
P
-- Ta
C
No heat sink
2SA2039 / 2SC5706
IT02981
8
6
4
Collector Dissipation, P
2
0
2006040 80 100 140120 160
Case Temperature, Tc -- °C
IT02982
No.6912-5/10
Page 6
2SA2039/2SC5706
Taping Specifi cation
2SA2039-TL-E, 2SC5706-TL-E, 2SC5706-TL-H
No.6912-6/10
Page 7
2SA2039/2SC5706
Outline Drawing Land Pattern Example
2SA2039-TL-E, 2SC5706-TL-E, 2SC5706-TL-H
Mass (g) Unit
0.282
* For reference
mm
7.0
Unit: mm
7.0
2.02.5
2.3
1.5
2.3
No.6912-7/10
Page 8
Bag Packing Specifi cation
2SA2039-E, 2SC5706-E, 2SC5706-H
2SA2039/2SC5706
No.6912-8/10
Page 9
Outline Drawing
2SA2039-E, 2SC5706-E, 2SC5706-H
2SA2039/2SC5706
Mass (g) Unit
0.315
* For reference
mm
No.6912-9/10
Page 10
2SA2039/2SC5706
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation.
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's products or equipment. To verify symptoms and states that cannot be evaluated in an
This catalog provides information as of August, 2012. Specifi cations and information herein are subject to change without notice.
No.6912-10/10PS
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