Page 1
2SC5225
Silicon NPN Epitaxial Transistor
Application
• Wide band video output amplifier for color CRT monitor.
• High frequency high voltage amplifier.
• High speed power switching.
• Complementary pair with 2SA1960.
Features
• High voltage large current operation.
V
= 80 V, IC = 300 mA
CEO
• High fT.
fT = 1.4 GHz
• Small output capacitance.
Cob = 3 pF
ADE-208-393
1st. Edition
Page 2
2SC5225
Outline
TO-92 (1)
3
2
1
Absolute Maximum Ratings (Ta = 25°C)
1. Emitter
2. Collector
3. Base
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
100 V
80 V
3V
300 mA
625 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
2
Page 3
2SC5225
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Collector to base cutoff current I
Emitter to base cutoff current I
DC current transfer ratio h
Gain bandwidth product f
CBO
EBO
FE
T
Emitter input capacitance Cib — 13 19 pF VEB = 0, IC = 0, f = 1 MHz
Collector output capacitance Cob — 3 4 pF VCB = 10 V, IE = 0, f = 1 MHz
Collector Power Dissipation Curve
1000
800
100 — — V IC = 100 µA, IE = 0
80——V I
= 1 mA, RBE = ∞
C
——1 µAVCB = 80 V, IE = 0
——10µAVEB = 3 V, IC = 0
20 70 — VCE = 5 V, IC = 50 mA
Pulse test
1.2 1.4 — GHz VCE = 10 V, IC = 50 mA
DC Current Transfer Ratio vs.
Collector Current
100
V = 5V
FE
CE
50
600
400
200
Collector Power Dissipation Pc (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
20
DS Current Transfer Ratio h
10
1 2 5 10 20 50 100200 500
Collector Current I (mA)
C
3
Page 4
2SC5225
Collector to Emitter Saturation Voltage
vs. Collector Current
500
I / I = 10
200
CE(sat)
V (mV)
CB
100
50
20
Collector to Emitter Saturation Voltage
10
1 2 5 10 20 50 100 200 500
Collector Current I (mA)
C
Collector Output Capacitance vs.
Collector to Base Voltage
10
I = 0
E
f = 1 MHz
5
Collector Current vs.
Base to Emitter Voltage
500
V = 5V
200
CE
100
50
C
20
10
5
2
1
0.5
Collector Current I (mA)
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V (V)
Emitter Input Capacitance vs.
Emitter to Base Voltage
20
I = 0
f = 1 MHz
10
BE
C
2
1
Collector Output Capacitance Cob (pF)
0.5 1 2 5 10 20 50
Collector to Base Voltage V (V)
CB
5
Emitter Input Capacitance Cib (pF)
2
0.5
12 5
Emitter to Base Voltage V (V)
EB
4
Page 5
Gain Bandwidth Product vs.
1.5
T
1.0
0.5
Gain Bandwidth Product f (GHz)
0
1 2 5 10 20 50 100
Collector Current
V = 10 V
CE
V = 5 V
CE
Collector Current I (mA)
C
2SC5225
5
Page 6
Unit: mm
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
1.27
2.54
0.7
5.0 ± 0.2
2.3 Max
12.7 Min
3.8 ± 0.3
0.5
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Page 7
Cautions
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