Datasheet 2SC5218 Datasheet (HIT)

2SC5218

Silicon NPN Epitaxial

Application

VHF / UHF wide band amplifier

Features

• High gain bandwidth product

fT = 9 GHz typ

• High gain, low noise figure

PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz

ADE-208-279

1st. Edition

Outline

MPAK

3

1

2

1. Emitter

2. Base

3. Collector

2SC5218

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: Marking is “YK–”.

Attention: This device is very sensitive to electro static discharge.

It is recommended to adopt appropriate cautions when handling this transistor.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector cutoff current I

Emitter cutoff current I
DC current transfer ratio h

CBO

I

CEO

EBO

FE

Collector output capacitance Cob — 0.8 1.4 pF VCB = 5 V, IE = 0,

Gain bandwidth product f

T

Power gain PG 10 13 — dB VCE = 5 V, IC = 20 mA,

Noise figure NF — 1.2 2.5 dB VCE = 5 V, IC = 5 mA,

15——V I

——1 µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 120 250 VCE = 5 V, IC = 20 mA

6.0 9.0 — GHz VCE = 5 V, IC = 20 mA

15 V
9V

1.5 V
50 mA
150 mW

= 10 µA, IE = 0

C

= 9 V, RBE = ∞

CE

f = 1 MHz

f = 900 MHz

f = 900 MHz

2

Maximum Collector Dissipation Curve

150

(mW)

C

100

50

Collector Power Dissipation P

0

Ambient Temperature Ta (°C)

2SC5218

DC Current Transfer Ratio vs.

200

FE

160

120

80

40

V = 5 V

DC Current Transfer Ratio h

Pulse Test

0

15010050

0.1

Collector Current

CE

110

Collector Current I (mA)

C

100

Gain Bandwidth Product vs.

Collector Current

CE

T

10

V = 5V

8

6

4

2

Gain Bandwidth Product f (GHz)

0

1

251020 50 100

Collector Current I (mA)

C

Collector Output Capacitance vs.

2.0

1.6

Collector to Base Voltage

I = 0

E

f = 1 MHz

1.2

0.8

0.4

0

Collector Output Capacitance Cob (pF)

0.5 1 2 5 10 20 50
Collector to Base Voltage V (V)

CB

3

2SC5218

Power Gain vs. Collector Current

20

V = 5V

CE

f = 900 MHz

16

12

8

Power Gain PG (dB)

4

0

1 2 5 10 20 50 100

Collector Current I (mA)

C

S21 Parameter vs. Collector Current

20

16

2121

12

Noise Figure vs. Collector Current

5

V = 5V

CE

f = 900 MHz

4

3

2

Noise Figure NF (dB)

1

0

1 2 5 10 20 50 100

Collector Current I (mA)

V = 5V

CE

C

f = 1 GHz

8

4

S Parameter |S | (dB)

0

1 2 5 10 20 50 100

Collector Current I (mA)

C

4

2SC5218

0

–.2

180°

S11 Parameter vs. Frequency

1

.8

.6

.4

.2

–.6

.6

–.8

.8

CE

1.0

–1

.4

.2

–.4

Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)

(I = 5 mA)

C

(I = 20 mA)

C

S12 Parameter vs. Frequency

90°

120°

150°

–150°

–120°

Condition: V = 5 V , Zo = 50
100 to 1000 MHz (100 MHz step)

–90°

CE

(I = 5 mA)
(I = 20 mA)

1.5

1.5

234

–1.5

Scale: 0.04 / div.

60°

–60°

C
C

S21 Parameter vs. Frequency

Scale: 6 / div.

90°

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

150°

180°

–150°

Ω

120°

–120°

Condition: V = 5 V , Zo = 50

–90°

CE

60°

30°

0°

–30°

–60°

Ω

100 to 1000 MHz (100 MHz step)

(I = 5 mA)

C

(I = 20 mA)

C

S22 Parameter vs. Frequency

1

.8

.6

.4

30°

0°

–30°

Ω

.2

–.6

.6

.4

–.8

0

.2

–.2

–.4

Condition: V = 5 V , Zo = 50

.8

–1

CE

100 to 1000 MHz (100 MHz step)

1.5

1.5

1.0

234

–1.5

(I = 5 mA)

C

(I = 20 mA)

C

2

3

4

5

10

10

5

–10

–5

–4

–3

–2

Ω

5

2SC5218

S Parameter (VCE = 5 V, IC = 5 mA, ZO = 50 Ω)

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

100 0.817 –34.7 14.1 156 0.034 72.3 0.916 –19.8
200 0.701 –64.5 11.6 136 0.058 59.8 0.761 –34.8
300 0.602 –88.3 9.32 122 0.073 52.9 0.620 –43.9
400 0.536 –106 7.61 112 0.083 49.8 0.520 –49.3
500 0.495 –120 6.40 105 0.091 48.9 0.447 –52.5
600 0.468 –132 5.50 99.5 0.097 49.3 0.396 –54.5
700 0.447 –141 4.80 94.9 0.104 50.0 0.357 –55.7
800 0.434 –150 4.27 90.9 0.110 50.9 0.327 –56.5
900 0.423 –157 3.83 87.2 0.117 52.1 0.305 –57.5
1000 0.428 –164 3.50 83.9 0.124 53.3 0.287 –58.4

S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω)

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

100 0.529 –70.4 29.9 136 0.025 64.9 0.716 –39.8
200 0.427 –111 19.0 115 0.038 60.3 0.462 –56.6
300 0.386 –134 13.4 104 0.048 61.8 0.330 –63.2
400 0.370 –150 10.2 98.0 0.058 64.3 0.260 –66.2
500 0.366 –159 8.28 93.7 0.069 66.6 0.214 –67.8
600 0.367 –167 6.96 89.7 0.080 67.8 0.184 –68.8
700 0.364 –174 6.01 87.0 0.091 68.7 0.162 –69.1
800 0.360 –179 5.28 84.2 0.102 69.5 0.146 –69.7
900 0.362 176 4.71 81.7 0.115 69.4 0.133 –70.4
1000 0.364 171 4.27 79.3 0.126 69.6 0.123 –71.5

6

Unit: mm

3 – 0.4

+ 0.10
– 0.05

0.95

1.9 ± 0.2

2.95 ± 0.2

0.95

0.65

+ 0.2

1.5 ± 0.15

0.65

0.3

+ 0.2

– 0.6

2.8

– 0.1

1.1

+ 0.10

0.16

– 0.06

0 – 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

MPAK
—
Conforms

0.011 g

Cautions

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intellectual property rights, in connection with use of the information contained in this document.

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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products.

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