Page 1
2SC4829
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• High frequency characteristics
fT = 1100 MHz Typ
• High voltage and small output capacitance
V
= 100 V, Cob = 4.2 pF Typ
CEO
• Suitable for wide band video amplifier
Outline
TO-92MOD
1. Emitter
2. Collector
3. Base
3
2
1
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2SC4829
Ordering Information
h
FE
2SC4829B 60 to 120
2SC4829C 100 to 200
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current i
Collector power dissipation P
CBO
CEO
EBO
C
C (peak)
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
100 V
100 V
3V
0.2 A
0.5 A
0.9 W
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector to emitter breakdown
V
(BR)CEO
voltage
Emitter cutoff current I
Collector cutoff current I
DC current
2SC4829B h
EBO
CBO
FE
transfer ratio
2SC4829C h
Base to emitter voltage V
Collector to emitter saturation
V
FE
BE
CE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — 4.2 6.0 pF VCB = 30 V, IE = 0, f = 1 MHz
100 — — V IC = 10 µA, IE = 0
100 — — V IC = 1 mA, RBE = ∞
——10µAVEB = 3 V, IC = 0
— — 1.0 µAVCB = 80 V, IE = 0
60 — 120 VCE = 10 V, IC = 10 mA
100 — 200
— — 1.0 V VCE = 10 V, IC = 10 mA
— — 1.0 V IC = 100 mA, IB = 10 mA
800 1100 — MHz VCE = 10 V, IE = 100 mA
2
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2SC4829
Maximum Collector Dissipation Curve
1.6
1.2
0.8
0.4
Collector Power Dissipation Pc (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
DC Current Transfer Ratio
vs. Collector Current
1000
FE
500
V = 10 V
CE
Pulse test
Typical Output Characteristics
50
400 µA
40
C
30
350 µA
300 µA
250 µA
200 µA
20
150 µA
10
Collector Current I (mA)
0
2
46810
100 µA
50 µA
I = 0
B
Collector to Emitter Voltage V (V)
Collector to Emitter Saturation
Voltage vs. Collector Current
1.0
I / I = 10
0.5
Pulse test
CE
C
B
200
Ta = 75°C
100
25 °C
–25°C
50
20
DC Current Transfer Ratio h
10
1 10 100 1000
Collector Current I (mA)
C
CE(sat)
0.2
V (V)
Ta = 75°C
0.1
25 °C
0.05
–25°C
0.02
Collector to Emitter Saturation Voltage
0.01
1 10 100 1000
Collector Current I (mA)
C
3
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2SC4829
Collector Current vs.
Base to Emitter Voltage
1000
V = 10 V
CE
Pulse test
C
100
Ta = 75°C
25°C
10
–25°C
Collector Current I (mA)
1
0.2 0.4 0.6 0.8 1.0
0
Base to Emitter Voltage V (V)
BE
Collector Output Capacitance vs.
Collector to Base Voltage
100
50
Gain Bandwidth Product vs.
Collector Current
5000
V = 10 V
CE
Pulse test
2000
T
1000
500
200
100
Gain Bandwidth Product f (MHz)
50
1 10 100 1000
Collector Current I (mA)
I = 0
E
C
f = 1 MHz
20
10
5
2
Collector Output Capacitance Cob (pF)
1 2 5 10 20 50 100
Collector to Base Voltage V (V)
CB
4
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Unit: mm
0.65 ± 0.1
0.75 Max
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
0.7
8.0 ± 0.5
2.3 Max
10.1 Min
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 Mod
—
Conforms
0.35 g
Page 6
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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