Datasheet 2SC4807 Datasheet (HIT)

2SC4807

Silicon NPN Epitaxial

Application

VHF / UHF wide band amplifier

Features

• High gain bandwidth product

fT = 4.4 GHz Typ

• High output power

1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz

Outline

UPAK

1

2

3

4

1. Base

2. Collector

3. Emitter

4. Collector (Flange)

2SC4807

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation PC*

CBO

CEO

EBO

C

1

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value on the alumina ceramics board (12.5 x 20 x 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector cutoff current I

Emitter cutoff current I
DC current transfer ratio h

CBO

I

CEO

EBO

FE

Collector output capacitance Cob — 2.8 4.0 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product f

T

Power gain PG 5.0 7.0 — dB VCE = 5 V, IC = 100 mA,

Noise figure NF — 2.5 4.0 dB VCE = 5 V, IC = 20 mA,

Note: Marking is “ER”.

20 30 — V IC = 10 µA, IE = 0

——1 µAVCB = 15 V, IE = 0
——1 mAV
——10µAVEB = 2 V, IC = 0
50 120 250 VCE = 5 V, IC = 100 mA

3.0 4.4 — GHz VCE = 5 V, IC = 100 mA

20 V
15 V
2V
200 mA
800 mW

= 15 V, RBE = ∞

CE

f = 900 MHz

f = 900 MHz

2

2SC4807

Maximum Collector Dissipation Curve

1600

1200

800

400

(on the alumina ceramic board)

Collector Power Dissipation Pc (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Gain Bandwidth Product

vs. Collector Current

6

V = 5 V

5

T

CE

4

3

DC Current Transfer Ratio

vs. Collector Current

200

FE

160

120

80

40

DC Current Transfer Ratio h

0

1

2 5 10 20 50 100 200 500

Collector Current I (mA)

Collector Output Capacitance vs.

Collector to Base Voltage

5.2

4.4

3.6

V = 5V

CE

C

I = 0

E

f = 1 MHz

2

1

Gain Bandwidth Product f (GHz)

0

20 50 100 200 500

10

Collector Current I (mA)

C

2.8

2.0

1.2

Collector Output Capacitance Cob (pF)

0.5

12 51020

Collector to Base Voltage V (V)

CB

3

2SC4807

Power Gain vs. Collector Current

10

f = 900 MHz

V = 5V

CE

8

6

4

Power Gain PG (dB)

2

0

2

5 10 20 50 100 200

Collector Current I (mA)

C

Output Power vs. Input Power

32

f = 900 MHz

V = 5V

CE

24

I = 100 mA

C

Noise Figure vs. Collector Current

10

f = 900 MHz

8

V = 5V

CE

6

4

Noise Figure NF (dB)

2

0

2 5 10 20 50 100 200

Collector Current I (mA)

C

16

8

Output Power Pout (dBm)

0

8 162432

Input Power Pin (dBm)

4

2SC4807

S11 Parameter vs. Frequency

1

.8

.6

.4

.2

0

.2

.6

.8

.4

1.0

–.2

–.4

–.6

–.8

–1

Condition: V = 5 V , Zo = 50

CE

100 to 1000 MHz (100 MHz step)

(I = 20 mA)

C

(I = 100 mA)

C

S12 Parameter vs. Frequency

1.5

1.5

2

–1.5

S21 Parameter vs. Frequency

90°

Scale: 4 / div.

2

120°

60°

3

4

5

150°

30°

10

10

3

45

180°

0°

–10

–5

–2

–3

–4

–150°

–120°

–60°

–30°

–90°

Ω

Condition: V = 5 V , Zo = 50

CE

Ω

100 to 1000 MHz (100 MHz step)

(I = 20 mA)

C

(I = 100 mA)

C

S22 Parameter vs. Frequency

180°

–150°

90°

120°

150°

–120°

Condition: V = 5 V , Zo = 50

–90°

CE

100 to 1000 MHz (100 MHz step)

(I = 20 mA)

C

(I = 100 mA)

C

Scale: 0.1 / div.

60°

30°

–30°

–60°

Ω

0°

1

.8

.6

.4

.2

.4

0

.2

1.0 2345

.6 .8

–.2

–.4

–.6

–.8

–1

Condition: V = 5 V , Zo = 50

CE

100 to 1000 MHz (100 MHz step)

(I = 20 mA)

C

(I = 100 mA)

C

1.5

1.5

–1.5

–2

2

3

4

5

10

10

–10

–5

–4

–3

Ω

5

2SC4807

S Parameter (VCE = 5 V, IC = 20 mA, ZO = 50 Ω, Emitter Common)

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

100 0.525 –150.0 14.03 104.7 0.039 58.4 0.336 –75.5
200 0.533 –171.9 7.16 90.9 0.063 65.7 0.197 –89.9
300 0.542 177.6 4.75 83.2 0.089 69.6 0.157 –98.3
400 0.544 170.2 3.60 77.5 0.116 71.0 0.146 –104.0
500 0.547 163.8 2.91 72.1 0.143 71.5 0.145 –109.0
600 0.552 158.2 2.46 67.4 0.170 71.3 0.150 –113.7
700 0.555 152.6 2.14 63.3 0.197 70.5 0.158 –117.1
800 0.558 147.5 1.90 59.3 0.225 69.6 0.166 –121.0
900 0.570 142.4 1.72 55.2 0.254 68.4 0.175 –124.6
1000 0.569 137.4 1.58 51.9 0.280 67.2 0.186 –128.1

S Parameter (VCE = 5 V, IC = 100 mA, ZO = 50 Ω, Emitter Common)

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

100 0.488 –172.8 16.32 97.8 0.034 76.2 0.248 –116.9
200 0.502 176.3 8.08 88.0 0.066 78.6 0.195 –141.9
300 0.507 170.0 5.34 82.0 0.099 77.8 0.184 –152.2
400 0.507 163.6 4.03 77.2 0.132 76.4 0.181 –157.9
500 0.514 159.0 3.27 72.8 0.163 74.5 0.184 –161.8
600 0.513 153.6 2.75 68.8 0.195 72.7 0.189 –164.0
700 0.518 148.5 2.40 65.1 0.225 70.7 0.192 –165.8
800 0.524 144.0 2.13 61.3 0.254 68.5 0.196 –167.6
900 0.525 139.3 1.93 57.8 0.284 66.3 0.200 –169.4
1000 0.531 134.2 1.77 54.6 0.312 64.6 0.205 –170.8

6

Unit: mm

0.53 Max

0.48 Max

4.5 ± 0.1

1.8 Max

1.5

1.5

3.0

1.5 ± 0.1

0.4

φ

1

0.44 Max

(1.5)

(2.5)

2.5 ± 0.1

4.25 Max

0.44 Max

(0.4)

(0.2)

0.8 Min

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

UPAK
—
Conforms

0.050 g

Cautions

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intellectual property rights, in connection with use of the information contained in this document.

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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products.

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