
2SC4774 / 2SC4713K
Transistors
High frequency amplifier transistor,
RF switching (6V, 50mA)
2SC4774 / 2SC4713K
zFeatures
1) Very low output-on resistance (Ron).
2) Low capacitance.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
V
Tstg
Limits
CBO
CEO
EBO
I
C
P
C
Tj
12
6
3
50
0.2
150
−55 to +150
Unit
V
V
V
mA
W
°C
°C
zPackaging specifications and h
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denot
es h
FE
∗
2SC4774
UMT3
BM
T106
3000
FE
2SC4713K
SMT3
S
∗
S
BM
T146
3000
∗
zElectrical characteristics (T a=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
Parameter Symbol Min. Typ. Max. Unit Conditions
CBO
BV
BV
BV
V
12
270
300
−
6
−
3
−
−
−
−
−
−
−
−
800
1
−
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
Cob
Ron − 2 −ΩI
560
V
−
V
−
V
−
µA
0.5
µA
0.5
V
0.3
−
MHz
−
pF
1.7
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD pro tection circuit.
zDimensions (Unit : mm)
2SC4774
ROHM : UMT3
EIAJ : SC-70
2SC4713K
ROHM : SMT3
EIAJ : SC-59
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=10V
V
EB
=2V
I
C/IB
=10mA/1mA
V
CE/IC
=5V/5mA
V
CE
=5V, IE= −10mA, f=200MHz
V
CB
=10V, IE=0A, f=1MHz
B
=3mA, VI=100mVrms, f=500kHz
2.0
(3)
(2)
0.65
1.3
(3)
(2)
0.95 0.95
0.9
0.7
0.2
0.3
2.1
1.25
(1)
0.65
0.15
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
2.9
0.4
1.9
1.1
0.8
1.6
2.8
(1)
0.15
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
0.1Min.
0.3Min.
Rev.B 1/2

2SC4774 / 2SC4713K
Transistors
zElectrical characteristic curves
10
Ta=25°C
(mA)
8
C
6
4
2
COLLECTOR CURRENT : I
0
10 2345
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1
Grounded emitter output
characteristics ( )
1000
FE
500
200
100
50
20
DC CURRENT TRANSFER RATIO : h
10
COLLECTOR CURRENT : IC (mA)
Fig.4
DC current gain vs. collector current
20
(pF)
10
re
5
2
1
0.5
FEEDBACK CAPACITIANCE : C
0.2
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7
Collector output capacitance
vs. voltage
35mA
30mA
25mA
20mA
15mA
10mA
5mA
I
B
=0µ
Ta=25°C
CE
=5V
V
Ta=25°C
f=1MHz
50
Ta=25°C
(mA)
40
C
COLLECTOR CURRENT : I
A
1.0mA
30
20
10
0
0.10 0.2 0.3 0.4 0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2
Grounded emitter output
characteristics ( )
(mA)
1000
CE(sat)
500
200
100
50
20
10
5
500.1 200.2 100.5 512
COLLECTER SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (mA)
Fig.5
Collector-emitter saturation
voltage vs. collector current
20
10
(pF)
ob
5
2
1
0.5
OUTPUT CAPACITANCE : C
500.1 200.2 100.5 512
0.2
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Back capacitance voltage
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
I
B
=
0mA
Ta=25°C
C/IB
=10
I
Ta=25°C
f=1MHz
50
(mA)
40
C
30
20
10
COLLECTOR CURRENT : I
0
Fig.3
characteristics
2000
1000
(MHz)
T
500
200
100
50
GAIN BANDWIDTH PRODUCT : f
500.1 200.2 100.5 512
20
Fig.6
collector current
50
)
Ω
(
20
on
10
5
ON RESISTANE : R
2
1
500.1 200.2 100.5 512
Fig.9
base current
V
CE
=
°C
°C
°C
25
−25
125
0.40 0.8 1.2 1.6 2.0
BASE TO EMITTER VOLTAGE : VBE (V)
5V
Grounded emitter propagation
Ta=25°C
CE
=5V
V
COLLECTOR CURRENT : IC (mA)
Gain bandwidth product vs.
Ta=25°C
f=500kHz
υ
i=100mVrms
R
L
=1k
Ω
BASS CURRENT : IB (mA)
Output-on resistance vs.
500.1 200.2 100.5 512
500.1 200.2 100.5 512
Rev.B 2/2

Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0