Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4765
DESCRIPTION
·High Breakdown Voltage : V
= 1700V (Min)
CBO
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Horizontal deflection output for medium resolution display.
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CP
I
B
C
T
J
Collector-Base Voltage 1700 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 5 V
Collector Current- Continuous
Collector Current-Pulse
B Base Current- Continuous 2.5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
±5
±10
50 W
A
A
℃
T
stg
Storage Temperature Range -55~150
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4765
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
V
ECF
f
T
Emitter-Base Breakdown Voltage IE= 300mA ; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1.0A 5.0 V
Base-Emitter Saturation Voltage IC= 3.5A; IB= 1.0A 1.5 V
Collector Cutoff Current VCB= 1700V ; IE= 0 1.0 mA
Emitter Cutoff Current VEB= 5V ; IC= 0 66 200 mA
DC Current Gain IC= 1A ; VCE= 5V 8
DC Current Gain IC= 3.5A ; VCE= 5V 3.5 7.5
C-E Diode Forward Voltage IF= 3.5A 2.0 V
Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 1 3 MHz
C
OB
Switching times ;Resistive load
t
stg
t
f
Output Capacitance
Storage Time 3.0 μs
Fall Time
I
=0 ; VCB=10V;f
E
IC= 3.5A , IB1= 0.7A ; IB2= -1.4A
= 56Ω
R
L
=1.0MHz
test
250 pF
0.2 μs
isc Website：www.iscsemi.cn
2
Page 3
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4765
isc Website：www.iscsemi.cn
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