Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4746
DESCRIPTION
·High Breakdown Voltage : V
·High Switching Speed
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
= 1500V (Min)
CBO
℃)
SYMBOL PARAMETER VALUE UNIT
I
V
V
V
C(
CBO
CEO
EBO
I
C
surge
P
T
T
stg
C
J
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 8 A
Collector Current-Surge 20 A
)
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
50 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4746
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
V
CE
BE
I
CES
h
(sat)
(sat)
FE
t
f
Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ 800 V
Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 5.0 V
Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A B 1.5 V
Collector Cutoff Current VCE= 1500V ; RBE= 0 500 μA
DC Current Gain IC= 1A ; VCE= 5V 8 38
Fall Time ICP= 7A , IB1= 1.4A 0.5 μs
isc Website：www.iscsemi.cn
2
Page 3
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4746
isc Website：www.iscsemi.cn
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