Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4745
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·High Switching Speed
APPLICATIONS
·Designed for character display horizontal deflection
output stage applications
ABSOLUTE MAXIMUM RATINGS(T
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
I
I
C(
V
V
V
C(
CBO
CEO
EBO
I
C
peak
surge
P
C
T
J
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 6 A
Collector Current-Peak 7 A
)
Collector Current-Surge 16 A
)
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150 ℃
50 W
T
stg
Storage Temperature Range -55~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4745
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
V
CE
BE
I
CES
h
(sat)
(sat)
FE
t
f
Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ 800 V
Emitter-Base Breakdown Voltage IE= 10mA ; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 5.0 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V
Collector Cutoff Current VCE= 1500V ; RBE= 0 500 μA
DC Current Gain IC= 1A ; VCE= 5V 7 30
Fall Time ICP= 5A , IB1= 1A; fH= 64kHz 0.4 μs
isc Website：www.iscsemi.cn
2
Page 3
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4745
isc Website：www.iscsemi.cn
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