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NPN EPITAXIAL PLANAR TRANSISTOR
Lead(Pb)-Free
P b
Features:
2SC4672
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
* Low saturation voltage, typically
VCE(sat) =0.35V at IC/IB=1A/50mA.
* Excellent DC current gain characteristics.
Mechanical Data:
* Case : Molded Plastic
ABSOLUTE MAXIMUM RATINGS(TA=25ºC Unless Otherwise Noted)
Symbol Value UnitRating
Collector to Base Voltage
V
CBO
60
SOT-89
V
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current (DC)
Total Device Disspation TA=25°C
Junction Temperature
Storage Temperature
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V
CEO
V
EBO
I
C
P
D
Tj
Tstg
6
2.0
2
+150
-55 to +150
V50
V
A
W
˚C
˚C
1/3 02-Apr-07
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2SC4672
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Max Unit
Collector-Base Breakdown Voltage
IC=50µA, IE=0
Collector-Emitter Breakdown Voltage
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
IE=50µA, IC=0
Collector Cut-Off Current
VCB=60V, IE=0
Emitter-Cut-Off Current
VEB=5V, IC=0
ON CHARACTERISTICS
*
DC Current Gain
VCE=2V, IC=500mA
Collector-Emitter Saturation Voltage
IC=1A, IB=50mA
BV
BV
BV
I
CBO
I
EBO
h
V
CE(sat)
CBO
CEO
EBO
FE
Typ
60
50
-
-
-
-
6.0 -- V
- - µA
- - µA
82 - 270
0.1
0.1
-
- - 0.35 V
V
V
*Pulse Test: Pluse Width ≤ 380µs, Duty Cycle ≤ 2%.
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=2V, IE=500mA, f=100MHz
Output Capacitance
VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF h
Rank
Range
Marking
FE
P Q
82-180 120-270
DKP DKQ
f
T
C
ob
- 210 - MHz
- 25 - pF
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2SC4672
SOT-89 Outline Dimensions
E
G
J
K
C
L
H
B
unit:mm
SOT-89
Dim
A
D
A
B
C
D
E
G
H
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
2.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
1.500TYP
3.100
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