Page 1
SHINDENGEN
Switching Power Transistor
2SC4669
(TE10S4)
10A NPN
RATINGS
LSV Series
OUTLINE DIMENSIONS
Case : E-pack
Unit : mm
●Absolute Maximum Ratings
Item Symbol
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
●Electrical Characteristics (Tc=25℃)
Item Symbol
Collector to Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
Conditions
Ratings Unit
Tstg -55～150 ℃
Tj 150 ℃
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
V
(sus)
CEO
I
CBO
I
CEO
I
EBO
h
FE
VCE(sat)
VBE(sat)
θjc
f
T
Tc = 25℃
IC = 0.1A
At rated Voltage
At rated Voltage
V
= 2V, IC = 5A
CE
IC = 5A
IB = 0.5A
Junction to case
V
= 10V, IC = 1A
CE
Conditions
60 V
40 V
7V
10A
20 A
1.5 A
2A
10
Ratings Unit
Min 40 V
Max 0.1 mA
Max 0.1
Max 0.1 mA
Min 70
Max 0.3 V
Max 1.2 V
Max 12.5 ℃/W
TYP 50 MHz
ton Max 0.3
IC = 5A
ts
IB1 = 0.5A, IB2 = 0.5A
RL = 5Ω, V
BB2
= 4V
Max 1.5 μs
tf Max 0.5
W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Page 2
C
- I
FE
h
= 2V
CE
V
20
[A]
C
2SC4669
1000
Tc = 150°C
100°C
FE
50°C
100
25°C0°C−25°C−55°C
10
DC Current Gain h
Collector Current I
0.001 0.01 0.1 1 10
Page 3
BE
[V]
Base-Emitter Voltage V
3
2.5
Saturation Voltage
2
1.5
1
15A
10A
7A
0.5
0
2
[A]
B
2SC4669
= 1A 3A 5A 7A 10A 15A
C
I
3
2.5
CE
[V]
5A
Base Current I
3A
= 1A
C
I
Tc = 25°C
2
1.5
1
0.5
0
0.001 0.01 0.1 1
Collector-Emitter Voltage V
Page 4
[µs]
SW
2SC4669
1
t
s
t
f
Switching Time - I
C
0.1
Switching Time t
0.01
0 2 4 6 8 10
t
on
Collector Current IC [A]
IB1 = 0.1I
IB2 = 0.1I
V
= 4V
BB2
VCC = 25V
Tc = 25°C
C
C
Page 5
[µs]
SW
2SC4669
1
Switching Time - Tc
t
s
t
f
0.1
Switching Time t
0.01
0 50 100 150
t
on
IC = 5A
IB1 = 0.5A
IB2 = 0.5A
V
R
Case Temperature Tc [°C]
BB2
= 5Ω
L
= 4V
Page 6
2
10
1
10
0
10
-1
10
Transient Thermal Impedance
2SC4669
100
10
-2
Time t [s]
10
-3
10
-4
10
-5
1
10
0.1
Transient Thermal Impedance θjc(t) [°C/W]
Page 7
20
10
[A]
C
DC
2SC4669
1ms10ms
PT limit
Forward Bias SOA
100µs
1
Collector Current I
Tc = 25°C
Single Pulse
0.1
1 10
Collector-Emitter Voltage VCE [V]
I
S/B
limit
40
Page 8
100
80
60
2SC4669 Collector Current Derating
I
limit
S/B
40
Collector Current Derating [%]
20
VCE = fixed
0
0 50 100 150
PT limit
Case Temperature Tc [°C]
Page 9
20
15
[A]
C
2SC4669
Reverse Bias SOA
10
Collector Current I
5
IB1 = 0.04I
IB2 = 0.4A
V
= 5V
BB2
Tc < 150°C
0
0 10 20 30 40 50
Collector-Emitter Voltage VCE [V]
C
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