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查询2SC4655供应商
Transistor
2SC4655
Silicon NPN epitaxial planer type
For high-frequency amplification
Features
■
●
Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
●
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
1.6±0.15
0.8±0.1 0.40.4
1
0.5
1.6±0.1
1.0±0.1
0.5
2
0.3
0.75±0.15
0.45±0.1
1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package
0.2±0.1
0 to 0.1
Marking symbol : K
3
Unit: mm
–0.05
+0.1
0.2
–0.05
+0.1
0.15
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
*
hFE Rank classification
Symbol
V
CBO
V
CEO
V
EBO
h
FE
f
T
C
re
Rank B C
h
FE
70 ~ 160 110 ~ 250
Marking Symbol KB KC
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
*
VCE = 10V, IC = 1mA
VCB = 10V, IE = –1mA, f = 200MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
min
30
20
5
70
150
typ
230
1.3
max
250
Unit
V
V
V
MHz
pF
1
Page 2
Transistor 2SC4655
PC — Ta IC — V
150
)
mW
125
(
C
100
75
50
25
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
IC — V
BE
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
02.01.60.4 1.20.8
Base to emitter voltage VBE (V
Ta=75˚C
25˚C
–25˚C
VCE=10V
CE
12
IB=100µA
10
)
mA
(
8
C
6
4
Collector current I
2
0
018612
)
)
Collector to emitter voltage VCE (V
V
CE(sat)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
Collector current IC (mA
— I
25˚C
Ta=25˚C
80µA
60µA
40µA
20µA
)
C
IC/IB=10
Ta=75˚C
–25˚C
)
12
10
)
mA
(
8
C
6
4
Collector current I
2
0
0 18060 120
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
IC — I
B
VCE=10V
Ta=25˚C
Base current IB (µA
hFE — I
C
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
)
fT — I
600
)
500
MHz
(
T
400
300
200
100
Transition frequency f
0
– 0.1 –1 –10 –100– 0.3 –3 –30
VCB=10V
Emitter current IE (mA
2
E
Ta=25˚C
6V
80
)
Ω
70
(
rb
60
50
40
30
20
10
Reverse transfer impedance Z
0
– 0.1 – 0.3 –1 –3 –10
)
Zrb — I
E
f=2MHz
Ta=25˚C
VCB=6V
10V
Emitter current IE (mA
)
2.4
pF
(
re
2.0
1.6
1.2
0.8
0.4
Common emitter reverse transfer capacitance C
0
0.1 1 10 1000.3 3 30
)
Collector to emitter voltage VCE (V
Cre — V
CE
IC=1mA
f=10.7MHz
Ta=25˚C
)
Page 3
Transistor 2SC4655
Cob — V
1.6
)
pF
1.4
(
ob
1.2
1.0
0.8
0.6
0.4
0.2
Collector output capacitance C
0
1 3 10 30 100
CB
IE=0
f=1MHz
Ta=25˚C
Collector to base voltage VCB (V
bfe — g
fe
0
)
mS
(
100
– 0.1mA
–20
fe
100
100
–40
100
–60
–80
–100
Forward transfer susceptance b
–120
0 1008020 6040
– 0.4mA
58
0.45
10.7
25
–1mA
58
58
58
IE=–7mA
f=0.45MHz
10.7
–2mA
25
–4mA
10.7
25
yfe=gfe+jb
fe
VCE=10V
Forward transfer conductance gfe (mS
12
10
)
mS
(
ie
Input susceptance b
)
1.2
)
1.0
mS
(
oe
0.8
0.6
0.4
0.2
Output susceptance b
)
bie — g
ie
yie=gie+jb
ie
VCE=10V
8
6
4
10.7
IE=– 0.1mA
–1mA
–2mA
2
–4mA
–7mA
f=0.45MHz
0
020164128
25
100
58
Input conductance gie (mS
boe — g
oe
100
–7mA
–4mA
–2mA
–1mA
58
– 0.4mA
IE=– 0.1mA
25
10.7
yoe=goe+jb
f=0.45MHz
0
0 1.00.80.2 0.60.4
VCE=10V
Output conductance goe (mS
bre — g
re
0
)
yre=gre+jb
re
VCE=10V
mS
(
– 0.5
re
–1.0
–1.5
–2.0
–2.5
Reverse transfer susceptance b
–3.0
– 0.5 0– 0.1– 0.4 – 0.2– 0.3
)
oe
Reverse transfer conductance gre (mS
f=0.45MHz
– 0.4mA
–1mA
–2mA
–4mA
100
IE=–7mA
10.7
25
58
)
)
3
Page 4
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