Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4622
DESCRIPTION
·High Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·High Switching Speed
·Low Collector Saturation Voltage
·High Reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·Solid state relay
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
= 400V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base voltage 10 V
Collector Current-Continuous 7 A
B Base Current-Continuous 2 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
50 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 2.5
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4622
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
Switching times
t
on
t
stg
Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 400 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V
Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 0.8 V
Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.2 V
Collector Cutoff Current VCB= 450V ; IE=0 0.1 mA
Emitter Cutoff Current VEB= 10V; IC=0 0.1 mA
DC Current Gain IC= 4A; VCE= 5V 10
Turn-on Time 1.0
Storage Time 2.5
= 5A; IB1= 1A; IB2= -2A;
I
C
RL= 30Ω; PW=20μs;
Duty Cycle≤2%
μs
μs
t
f
Fall Time
isc Website：www.iscsemi.cn
2
0.5
μs
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