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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4313
DESCRIPTION
·Collector-Emitter Sustaining Voltage : V
CEO(SUS)
·Fast Switching speed
APPLICATIONS
·Color TV horizontal output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
SYMBOL PARAMETER VALUE UNIT
= 800V(Min)
℃)
V
V
V
I
I
P
T
T
CBO
CEO
EBO
I
C
CM
I
B
BM
T
J
stg
Collector-Base Voltage 900 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 10 A
Collector Current-Peak 20 A
B Base Current-Continuous 4 A
Base Current-Peak 8 A
Total Power Dissipation
@ TC=25℃
Junction Temperature 150
Storage Temperature Range -55~150
100 W
THERMAL CHARACTERISTICS
℃
℃
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.2
℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC4313
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(sat)
V
BE(sat)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
Switching times
Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 800 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 2.5 V
Collector Cutoff Current At rated Voltage 100
Collector Cutoff Current At rated Voltage 200
Emitter Cutoff Current At rated Voltage 100
DC Current Gain IC= 5A; VCE= 2V 7
DC Current Gain IC= 1mA; VCE= 2V 5
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 7 MHz
μA
μA
μA
t
on
t
stg
t
f
Turn-on Time 0.5
I
= 5A, IB1= -IB2= 1A;
C
= 50Ω; V
Storage Time 3.0
Fall Time
R
L
V
CC
= 250V
BB2
= 4V;
0.5
μs
μs
μs
isc Website：www.iscsemi.cn
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