Page 1
SHINDENGEN
Switching Power Transistor
2SC4235
(T3W80HFX)
3A NPN
HFX Series
OUTLINE DIMENSIONS
Case : MTO-3P
Unit : mm
RATINGS
●Absolute Maximum Ratings
Item Symbol
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Mounting Torque
●Electrical Characteristics (Tc=25℃)
Item Symbol
Collector to Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
Conditions
Ratings Unit
Tstg -55～150 ℃
Tj 150 ℃
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
T
TOR
V
(sus)
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FEL
VCE(sat)
VBE(sat)
θjc
f
T
ton
ts
tf
Tc = 25℃
(Recommended torque : 0.5N･m)
Conditions
IC = 0.1A
At rated Voltage
At rated Voltage
V
= 5V, IC = 1.5A
CE
V
= 5V, IC = 1mA
CE
IC = 1.5A
IB = 0.3A
Junction to case
V
= 10V, IC = 0.3A
CE
IC = 1.5A
IB1 = 0.3A, IB2 = 0.6A
RL = 170Ω, V
BB2
= 4V
1200 V
800 V
7V
3A
6
1
2
80
0.8
Ratings Unit
Min 800 V
Max 0.1 mA
Max 0.1
Max 0.1 mA
Min 8
Min 7
Max 1.0 V
Max 1.5 V
Max 1.56 ℃/W
TYP 8 MHz
Max 0.5
Max 3.5 μs
Max 0.3
A
W
N･m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Page 2
C
- I
FE
h
= 5V
CE
V
6
[A]
C
2SC4235
100
Tc = 150°C
100°C
50°C
FE
25°C
0°C
10
−25°C
−55°C
DC Current Gain h
Collector Current I
1
0.001 0.01 0.1 1
Page 3
BE
[V]
Base-Emitter Voltage V
3
2.5
Saturation Voltage
2
1.5
1
4.5A
3.0A
1.5A
0.5
0
2
[A]
B
2SC4235
= 0.3A 0.75A 1.5A 3.0A 4.5A
C
I
3
2.5
CE
[V]
Base Current I
0.75A
= 0.3A
C
I
2
1.5
1
0.5
Tc = 25°C
0.01 0.1 1
0
Collector-Emitter Voltage V
Page 4
[µs]
SW
10
2SC4235
1
Switching Time - I
t
s
C
Switching Time t
0.1
0.01
0 0.5 1 1.5 2 2.5 3
t
on
t
f
Collector Current IC [A]
IB1 = 0.2I
IB2 = 0.4I
V
BB2
VCC = 250V
Tc = 25°C
C
C
= 4V
Page 5
[µs]
SW
10
2SC4235
1
Switching Time - V
t
s
t
on
CC
Switching Time t
0.1
0.01
0 50 100 150 200 250 300
t
f
IC = 1.5A
IB1 = 0.3A
IB2 = 0.6A
V
Tc = 25°C
Collector Voltage VCC [V]
BB2
= 4V
Page 6
[µs]
SW
10
2SC4235
1
Switching Time - Tc
t
s
t
on
Switching Time t
0.1
0.01
0 50 100 150
t
f
IC = 1.5A
IB1 = 0.3A
IB2 = 0.6A
V
R
Case Temperature Tc [°C]
= 4V
BB2
= 167Ω
L
Page 7
[µs]
SW
10
2SC4235
L-Load Switching Time - I
t
s
C
1
Switching Time t
0.1
0.01
0 0.5 1 1.5 2 2.5 3
tf + t
vs
t
f
IB1 = 0.2I
IB2 = 0.4I
V
BB2
V
CE (clamp)
Tc = 25°C
Collector Current IC [A]
C
C
= 4V
= 300V
Page 8
2SC4235
10
1
[µs]
SW
L-Load Switching Time - IC (At High Temperature)
t
s
Switching Time t
0.1
0.01
0 0.5 1 1.5 2 2.5 3
tf + t
vs
t
f
IB1 = 0.2I
IB2 = 0.4I
V
BB2
V
CE (clamp)
Tc = 100°C
Collector Current IC [A]
C
C
= 4V
= 300V
Page 9
1
10
0
10
-1
10
Transient Thermal Impedance
2SC4235
10
1
0.1
0.01
Time t [s]
-2
10
-3
10
-4
10
Transient Thermal Impedance θjc(t) [°C/W]
0.001
Page 10
[A]
C
2SC4235
6
DC
PT limit
1
Forward Bias SOA
I
S/B
1ms10ms
limit
150µs
50µs
0.1
Collector Current I
Tc = 25°C
Single Pulse
0.01
1 10 100
Collector-Emitter Voltage VCE [V]
800
Page 11
100
80
60
2SC4235 Collector Current Derating
I
limit
S/B
40
Collector Current Derating [%]
20
VCE = fixed
0
0 50 100 150
PT limit
Case Temperature Tc [°C]
Page 12
2SC4235
6
Reverse Bias SOA
[A]
C
IB1 = 0.25I
IB2 = 0.45A
V
BB2
Tc < 150°C
5
4
3
C
= 5V
Collector Current I
2
1
0
0 200 400 600 800 1000 1200
Collector-Emitter Voltage VCE [V]
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