Datasheet 2SC4196 Datasheet (HIT)

Application

UHF Local oscillator

Outline

MPAK

2SC4196

Silicon NPN Epitaxial

3

1

2

1. Emitter

2. Base

3. Collector

2SC4196

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector cutoff current I

Emitter cutoff current I
Collector to emitter saturation

I

V

CBO

CEO

EBO

CE(sat)

voltage
DC current transfer ratio h

FE

Collector output capacitance Cob — 0.7 1.0 pF VCB = 10 V, IE = 0, f = 1MHz
Gain bandwidth product f
Oscillating output voltage V

T

OSC

Note: Marking is “QI–”.

25——V I

— — 0.3 µAVCB = 15 V, IE = 0
——10µAVCE = 15 V, RBE = ∞
— — 1.0 µAVEB = 3 V, IC = 0
— — 0.3 V IC = 20 mA, IB = 4 mA

50 — 180 VCE = 5 V, IC = 5 mA

1.8 2.4 — GHz VCE = 5 V, IC = 20 mA
— 200 — mV VCC = 5 V, IC = 5 mA,

25 V
15 V
3V
50 mA
150 mW

= 10 µA, IE = 0

C

f = 930 MHz

2

Maximum Collector Dissipation Curve

150

(mW)

C

2SC4196

DC Current Transfer Ratio vs.

Collector Current

200

FE

160

VCE = 5 V
Pulse

100

50

Collector Power Dissipation P

0

50

Ambient Temperature Ta (°C)

Gain Bandwidth Product vs.

Collector Current

4

VCE = 5 V
Pulse

(GHz)

3

T

2

1

100 150

120

80

40

DC Current Transfer Ratio h

0

512

Collector Current I

Collector Output Capacitance vs.

Collector to Base Voltage

1.1

1.0

IE = 0
f = 1 MHz

(pF)

ob

0.9

0.8

0.7

10 20 50

(mA)

C

Gain Bandwidth Product f

0

512

Collector Current I

10 20 50

(mA)

C

Collector Output Capacitance C

0.6
512

10 20 50

Collector to Base Voltage V

CB

(V)

3

2SC4196

Oscillating Output Voltage vs.

Supply Voltage

1,000

500

(mV)

osc

f = 930 MHz

200

100

3

50

20

Oscillating Output Voltage V

10

402

Supply Voltage V

IC = 8 mA

5

6810

(V)

CC

Oscillating Output Voltage vs.

Collector Current

1,000

500

(mV)

osc

f = 930 MHz

200

100

50

20

Oscillating Output Voltage V

10

20.5 1.0

Collector Current I

VCC = 8 V

5

3

51020

(mA)

C

4

S Parameters (Emitter Common)

Test condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz STEP), ZO = 50 Ω

IC = 5 mA
I

= 10 mA

C

2SC4196

0.2

0

–0.2

180°

0.4

–0.4

150°

0.2

–0.6

0.6

0.4

120°

S11-Frequency

1

0.8

0.6

0.8

1235

–0.8

–1

S12-Frequency

90°

1.5

1.5

4

–2

–1.5

Scale : 0.04/div
60°

S21-Frequency

90°

0.4

120°

–120°

0.6

0.2

–90°

S22-Frequency

1

0.8

0.4 0.6

0.8

1235

1.5

1.5

2

–3

3

4

5

10

10

∞

–10

–5

–4

30°

150°

180°

–150°

0.2

0

0°

Scale : 4/div

60°

–60°

2

4

30°

0°

–30°

3

4

5

10

10

∞

–150°

–120°

–90°

–60°

–30°

–0.2

–0.4

–0.6

–0.8

–1

–10

–5

–4

–3

–2

–1.5

5

2SC4196

S Parameters (Emitter Common)

Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Ω

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

100 0.718 –44.8 12.498 144.9 0.026 68.8 0.895 –14.6
200 0.549 –78.8 9.123 122.0 0.042 59.3 0.756 –20.3
300 0.439 –102.0 6.788 108.4 0.051 57.6 0.671 –21.3
400 0.381 –120.8 5.348 99.3 0.060 58.5 0.626 –21.5
500 0.351 –135.5 4.396 92.4 0.068 60.6 0.600 –21.8
600 0.340 –148.2 3.732 86.7 0.076 62.5 0.582 –22.5
700 0.337 –157.8 3.240 81.7 0.085 64.3 0.569 –23.3
800 0.337 –165.2 2.875 77.3 0.094 66.0 0.558 –24.4
900 0.343 –173.1 2.575 73.4 0.103 67.3 0.547 –25.8
1000 0.359 –177.9 2.355 70.0 0.112 68.4 0.538 –27.2

Test Condition VCE = 5 V, IC = 10 mA, ZO = 50 Ω

Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.

100 0.553 –65.2 17.540 133.2 0.022 64.8 0.809 –18.0
200 0.401 –103.4 11.066 111.3 0.033 61.3 0.659 –20.0
300 0.337 –127.4 7.723 99.9 0.043 63.9 0.598 –18.6
400 0.314 –143.9 5.939 92.5 0.052 66.3 0.570 –18.1
500 0.313 –155.7 4.816 86.7 0.063 68.6 0.555 –18.2
600 0.314 –165.5 4.052 81.8 0.073 70.1 0.545 –18.9
700 0.327 –172.2 3.496 77.6 0.083 71.4 0.536 –19.9
800 0.335 –177.7 3.090 73.8 0.093 72.4 0.530 –21.0
900 0.349 176.8 2.753 70.1 0.103 73.0 0.523 –22.4
1000 0.354 172.8 2.515 67.0 0.113 74.0 0.516 –24.0

6

2SC4196

Y Parameters (Emitter Common)

Test Condition VCE = 5 V, IC = 5 mA

Freq. Yie (mS) Yfe (mS) Yre (mS) Yoe (mS)
(MHz) REAL IMAG. REAL IMAG. REAL IMAG. REAL IMAG.

100 3.035 5.491 152.256 –40.168 –0.005 –0.334 0.048 0.613
200 6.463 10.003 131.145 –71.318 –0.015 –0.679 0.100 1.238
300 10.768 12.356 103.025 –90.187 –0.036 –1.034 0.191 1.804
400 15.089 13.186 77.334 –98.666 –0.065 –1.397 0.232 2.386
500 18.776 12.837 55.039 –99.977 –0.090 –1.767 0.270 2.947
600 22.098 11.913 37.290 –98.247 –0.128 –2.134 0.347 3.555
700 24.568 10.731 22.802 –93.799 –0.163 –2.515 0.417 4.133
800 26.291 9.416 11.686 –88.266 –0.193 –2.890 0.516 4.703
900 28.112 7.683 2.225 –82.972 –0.260 –3.305 0.614 5.354
1000 29.685 6.751 –3.931 –78.720 –0.291 –3.746 0.629 5.908

Test Condition VCE = 5 V, IC = 10 mA

Freq. Yie (mS) Yfe (mS) Yre (mS) Yoe (mS)
(MHz) REAL IMAG. REAL IMAG. REAL IMAG. REAL IMAG.

100 5.903 7.347 243.307 –103.091 –0.008 –0.338 0.026 0.591
200 11.583 10.820 168.225 –150.806 –0.022 –0.682 0.128 1.254
300 16.546 10.993 103.210 –155.623 –0.045 –1.041 0.216 1.797
400 20.055 10.038 61.965 –145.393 –0.074 –1.387 0.320 2.394
500 22.491 8.943 35.421 –131.365 –0.093 –1.766 0.316 2.917
600 24.417 7.556 16.762 –118.513 –0.133 –2.138 0.378 3.544
700 26.086 6.620 5.096 –107.291 –0.155 –2.531 0.424 4.086
800 27.193 5.569 –3.874 –97.359 –0.185 –2.923 0.469 4.659
900 28.543 4.340 –11.095 –88.952 –0.248 –3.349 0.563 5.307
1000 28.955 3.253 –15.953 –81.466 –0.270 –3.737 0.650 5.861

7

2SC4196

V

Test Circuit

OSC

D.U.T.

Ferrite
Bead

9 p

V

Test Circuit

osc

L

3

470

1 n

L

1

V

CC

47 k

1 n

V

T

330

1.2 p

2.2 n

6.8 k

L

2

1 n

V

osc

V

BB

Output

L1 : φ0.8 mm Enameled Copper Wire.

L2 : φ0.8 mm Enameled Copper Wire.

10

15

L

: Inside dia 3 mm, φ0.3 mm Enameled Copper Wire 10 Turns.

3

15

15

ISV188

10

5

Unit : mm

Unit

R : Ω
C : F

8

Unit: mm

3 – 0.4

+ 0.10
– 0.05

0.95

1.9 ± 0.2

2.95 ± 0.2

0.95

0.65

+ 0.2

1.5 ± 0.15

0.65

0.3

+ 0.2

– 0.6

2.8

– 0.1

1.1

+ 0.10

0.16

– 0.06

0 – 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

MPAK
—
Conforms

0.011 g

Cautions

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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.

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received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

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products.

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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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