Datasheet 2SC4226 Datasheet (NEC)

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC4226

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN SUPER MINIMOLD

DESCRIPTION

The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.

It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold

package.

FEATURES

• Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

• High gain : S

• 3-pin super minimold package

ORDERING INFORMATION

Part Number Quantity Supplying Form

2

21e

= 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

2SC4226 50 pcs (Non reel) • 8 mm wide embossed taping

2SC4226-T1 3 kpcs/reel • Pin 3 (Collector) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit

Collector to Base Voltage VCBO 20 V

Collector to Emitter Voltage VCEO 12 V

Emitter to Base Voltage VEBO 3 V

Collector Current IC 100 mA

Total Power Dissipation Ptot

Junction Temperature Tj 150 °C

Storage Temperature Tstg −65 to +150 °C

Note Free air

Note

150 mW

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.

Document No. PU10450EJ01V0DS (1st edition)
(Previous No. P10368EJ3V0DS00)
Date Published December 2003 CP(K)
Printed in Japan

The mark  shows major revised points.

NEC Compound Semiconductor Devices 1993, 2003



2SC4226

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics

Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA

Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA

DC Current Gain hFE

RF Characteristics

Gain Bandwidth Product fT VCE = 3 V, IC = 7 mA 3.0 4.5 – GHz

Insertion Power Gain S21e2 VCE = 3 V, IC = 7 mA, f = 1 GHz 7 9

Noise Figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz

Reverse Transfer Capacitance Cre

Note 1

VCE = 3 V, IC = 7 mA 40 110 250

Note 2

VCB = 3 V, IE = 0 mA, f = 1 MHz

− −

− −

−

−

1.2 2.5 dB

0.7 1.5 pF

µ

Notes 1. Pulse measurement: PW ≤ 350

s, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank R23 R24 R25

1.0

1.0

−

µ
µ

−

dB

A

A

Marking R23 R24 R25

hFE Value 40 to 80 70 to 140 125 to 250

2

Data Sheet PU10450EJ01V0DS

TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)

250

200

(mW)

tot

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

Free Air

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

5

(pF)

re

2

2SC4226

f = 1 MHz

150

100

50

Total Power Dissipation P

0

25 50 75 100 125 150

Ambient Temperature TA (˚C)

COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE

20

VCE = 3 V

(mA)

C

10

Collector Current I

1

0.5

0.2

Reverse Transfer Capacitance C

0.1
21 5 10 20 50

Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

25

20

(mA)

C

15

10

5

Collector Current I

µ

160 A

140 A

120 A

100 A

80 A

60 A

40 A

= 20 A

B

I

µ

µ

µ

µ

µ

µ

µ

0

Base to Emitter Voltage VBE (V)

0.5 1

DC CURRENT GAIN vs.
COLLECTOR CURRENT

200

100

FE

50

DC Current Gain h

20

10

15100.5 50

Collector Current IC (mA)

Remark The graphs indicate nominal characteristics.

VCE = 3 V

Data Sheet PU10450EJ01V0DS

0510

Collector to Emitter Voltage VCE (V)

GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT

20

(GHz)

10

T

5

2

Gain Bandwidth Product f

1

Collector Current IC (mA)

5100.5 1 50

VCE = 3 V
f = 1 GHz

3

2SC4226

INSERTION POWER GAIN

vs. FREQUENCY

24

20

(dB)

2

|

21e

16

12

8

4

Insertion Power Gain |S

0

0.1 0.2 0.5 1 2 5

Frequency f (GHz)

NOISE FIGURE vs.
COLLECTOR CURRENT

6

5

4

VCE = 3 V
I

C

= 7 mA

VCE = 3 V
f = 1 GHz

INSERTION POWER GAIN
vs. COLLECTOR CURRENT

15

CE

= 3 V

V
f = 1 GHz

(dB)

2

|

21e

10

5

Insertion Power Gain |S

0

0.5 5 10 501 100

Collector Current I

C

(mA)

3

2

Noise Figure NF (dB)

1

0

0.5 1 5 10 50 100

Collector Current I

C

(mA)

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.ncsd.necel.com/

4

Data Sheet PU10450EJ01V0DS

PACKAGE DIMENSIONS

3-PIN SUPER MINIMOLD (UNIT: mm)

2SC4226

2.1±0.1

2

1

1.25±0.1

Marking

0 to 0.1

3

–0

+0.1

0.3

–0.05

+0.1

0.15

2.0±0.2

0.9±0.1

0.65

0.65

+0.1

0.3

–0

0.3

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

(EIAJ : SC-70)

Data Sheet PU10450EJ01V0DS

5

2SC4226

•

The information in this document is current as of December, 2003. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4 - 0110

6

Data Sheet PU10450EJ01V0DS

2SC4226

For further information, please contact

NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/

E-mail: [e-mail] (sales and general)
[e-mail] (technical)
5th Sales Group, Sales Division TEL: [phone] FAX: [phone]

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: [e-mail] (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office

NEC Electronics (Europe) GmbH http://www.ee.nec.de/
TEL: [phone] FAX: [phone]

California Eastern Laboratories, Inc. http://www.cel.com/
TEL: [phone] FAX: [phone]

TEL: [phone]
TEL: [phone]
TEL: [phone]

FAX: [phone]
FAX: [phone]
FAX: [phone]

0310