Page 1
Application
High gain amplifier
Outline
2SC3957
Silicon NPN Epitaxial, Darlington
Page 2
2SC3957
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
40 V
Collector to emitter voltage V
CEO
30 V
Emitter to base voltage V
EBO
10 V
Collector current I
C
300 mA
Collector peak current I
C (peak)
500 mA
Collector power dissipation P
C
150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
Notes: 1. The 2SC3957 is grouped by hFE as follows.
2. Pulse test
Mark GIA GIB
h
FE1
h
FE2
h
FE3
2000 to 100000 5000 to 100000
3000 min 10000 min
3000 min 10000 min
V
(BR)CEO
CBO
EBO
FE1
h
FE2
h
FE3
V
CE(sat)
V
BE(sat)
1
*
1
*
1
*
30 — — V IC = 1 mA, RBE = ∞
— — 100 nA VCB = 30 V, IE = 0
— — 100 nA VEB = 10 V, IC = 0
2000 — 100000 IC = 10 mA, VCE = 5 V*
3000 — — IC = 100 mA, VCE = 5 V*
3000 — — IC = 400 mA, VCE = 5 V*
2
2
2
— — 1.5 V IC = 100 mA, IB = 0.1 mA*
— — 2.0 V IC = 100 mA, IB = 0.1 mA*
2
2
Page 3
2SC3957
3
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2SC3957
4
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