Datasheet 2SC3932 Datasheet (Panasonic)

Transistors

2SC3932

Silicon NPN epitaxial planer type

For high-frequency amplification / oscillation / mixing

■ Features

• High transition frequency f

• S-mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine packing.

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector power dissipation P Junction temperature T Storage temperature T

T

CBO

CEO

EBO

C

j

stg

30 V 20 V

3V

50 mA 150 mW 150 °C

−55 to +150 °C

+0.1

0.3

–0.0

132

(0.65)

1.3

±0.1

2.0

±0.2

10°

1: Base 2: Emitter EIAJ: SC-70 3: Collector S-Mini Type Package

Marking Symbol: R

(0.425)

±0.10

1.25

+0.2

±0.1

0.9

0 to 0.1

Unit: mm

+0.10

0.15

–0.05

±0.1

2.1

5°

±0.1

0.2

–0.1

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector to base voltage V Emitter to base voltage V

CBO

EBO

Forward current transfer ratio h Base to emitter voltage V Transition frequency

Common emitter reverse transfer capacitance

*

f C C

Power gain PG VCB = 10 V, IE = −1 mA, f = 200 MHz 20 dB

Note)*: Rank classification

Rank T S No-rank

fT (MHz) 800 to 1 400 1 000 to 1 600 800 to 1 600

Marking symbol RT RS R

Product of no-rank is not classified and have no indication for rank.

IC = 100 µA, IE = 030 V IE = 10 µA, IC = 03V VCB = 10 V, IE = −2 mA 25 250

FE

VCB = 10 V, IE = −2 mA 720 mV

BE

VCB = 10 V, IE = −15 mA, f = 200 MHz 800 1 600 MHz

T

VCB = 10 V, IE = −1 mA, f = 10.7 MHz 1 1.5 pF

re

VCE= 6 V, IC = 0, f = 1 MHz 0.8 pF

rb

1

2SC3932 Transistors

PC  T

240

200

(mW)

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C)

IB  V

400

350

300

250

(µA)

B

200

150

Base current I

100

50

a

BE

VCE = 10 V

= 25°C

T

a

IC  V

24

20

16

(mA)

C

12

8

CE

IB = 300 µA

250 µA

200 µA

Collector current I

4

0

0 4 8 12 162 6 10 14 18

Collector to emitter voltage VCE (V)

IC  V

60

50

40

(mA)

C

30

20

Ta = 75°C

BE

25°C

−25°C

Collector current I

10

Ta = 25°C

150 µA

100 µA

50 µA

V

= 10 V

CE

IC  I

B

(mA)

C

24

20

16

12

8

Collector current I

4

0

0 500400300200100

Base current IB (µA)

hFE  I

240

200

FE

160

Ta = 75°C

120

80

Forward current transfer ratio h

40

25°C

−25°C

VCE = 10 V T

C

VCE = 10 V

= 25°C

a

0

0 2.01.61.20.80.4

Base to emitter voltage VBE (V)

V

100

(V)

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 0.3

Collector current IC (mA)

2

 I

CE(sat)

1 3 10 30 100

C

IC / IB = 10

Ta = 75°C

25°C

–25°C

0

0 2.01.61.20.80.4

Base to emitter voltage VBE (V)

fT  I

1 600

1 400

1 200

(MHz)

T

1 000

800

600

400

E

VCB = 10 V T

= 25°C

a

Transition frequency f

200

0

− 0.1 − 0.3 −1 −3 −10 −30 −100

Emitter current IE (mA)

0

0.1 0.3

1 3 10 30 100

Collector current IC (mA)

Cre  V

2.4

(pF)

re

2.0

1.6

1.2

0.8

0.4

0

Common emitter reverse transfer capacitance C

0.1 0.3 1 3 10 30 100

CE

IC = 1 mA f = 10.7 MHz

= 25°C

T

a

Collector to emitter voltage VCE (V)

Transistors 2SC3932

Z

 I

rb

120

100

(Ω)

rb

80

VCB = 10 V f = 2 MHz

= 25°C

T

a

E

40

35

30

25

PG  I

E

VCB = 10 V f = 100 MHz

= 50 Ω

R

g

= 25°C

T

a

NF  I

12

10

8

E

VCB = 10 V f = 100 MHz

= 50 Ω

R

g

= 25°C

T

a

60

40

20

Reverse transfer impedance Z

0

− 0.1

− 0.3

− 0.2

−1− 0.5 −5

Emitter current IE (mA)

bib  g

0

−10

(mS)

−20

IE = −2 mA

ib

−30

−40

Input susceptance b

−50

−60

05040302010

f = 900 MHz

−5 mA 600

500

Input conductance gib (mS)

−2 −3 −10

ib

yib = gib + jb

ib

VCB = 10 V

300

200

20

15

Power gain PG (dB)

10

5

0

− 0.1 − 0.3 −1 −3 −10 −30 −100

Emitter current IE (mA)

brb  g

0

yrb = grb + jb VCB = 10 V

− 0.4

(mS)

rb

− 0.8

−1.2

−1.6

−2.0

Reverse transfer susceptance b

−2.4

−1.0 0− 0.2− 0.4− 0.6− 0.8

rb

600

f = 900 MHz

IE = −5 mA

Reverse transfer conductance grb (mS)

200

300

500

−2 mA

6

4

Noise figure NF (dB)

2

0

− 0.1 − 0.3 −1 −3 −10 −30 −100

Emitter current IE (mA)

bfb  g

48

40

(mS)

fb

I

= −5 mA

E

32

−2 mA

24

16

8

Forward transfer susceptance b

0

−60 40200−20−40

fb

yfb = gfb + jb VCB = 10 V

f = 200 MHz

300

900

Forward transfer conductance gfb (mS)

fb

500

600

bob  g

12

yob = gob + jb VCE = 10 V

10

(mS)

8

ob

6

4

Output susceptance b

2

0

0 2.01.61.20.80.4

ob

= −2 mA

I

E

300

f = 200 MHz

Output conductance gob (mS)

ob

900

600

−5 mA

500

3