Page 1
Transistor
2SC3940, 2SC3940A
Silicon NPN epitaxial planer type
For low-frequency output amplification and driver amplification
Complementary to 2SA1534 and 2SA1534A
Features
■
●
Low collector to emitter saturation voltage V
●
Allowing supply with the radial taping.
CE(sat)
.
5.0±0.2
Unit: mm
4.0±0.2
8.0±0.2
0.7±0.2
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SC3940
2SC3940A
2SC3940
2SC3940A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
2SC3940
2SC3940A
2SC3940
2SC3940A
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
*1
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
Ratings
30
60
25
50
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
VCB = 20V, IE = 0
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 500mA
VCE = 5V, IB = 1A
*2
IC = 500mA, IB = 50mA
IB = 500mA, Ia = 50mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
0.7±0.1
13.5±0.5
+0.15
+0.15
–0.1
–0.1
0.45
0.45
123
2.54±0.15
min
30
60
25
50
5
85
1.27
2.3±0.2
1:Emitter
2:Collector
3:Base
TO–92NL Package
typ
max
0.1
340
Unit
µA
V
V
V
1.27
*2
50
*2
*2
0.2
0.85
200
11
*2
Pulse measurement
0.4
1.2
20
V
V
MHz
pF
1
Page 2
Transistor 2SC3940, 2SC3940A
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
Ta=75˚C
25˚C
–25˚C
Collector current IC (A
)
C
IC/IB=10
)
CE
1.5
1.25
)
A
(
1.0
C
0.75
0.5
Collector current I
0.25
0
0108264
Ta=25˚C
IB=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage VCE (V
V
— I
BE(sat)
100
)
V
(
30
BE(sat)
10
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
25˚C
Collector current IC (A
C
IC/IB=10
Ta=–25˚C
75˚C
)
1.2
VCE=10V
Ta=25˚C
1.0
)
A
(
0.8
C
0.6
0.4
Collector current I
0.2
0
012108264
)
Base current IB (mA
hFE — I
600
FE
500
400
300
Ta=75˚C
200
100
Forward current transfer ratio h
0
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC — I
25˚C
–25˚C
B
)
C
VCE=10V
)
fT — I
200
VCB=10V
Ta=25˚C
)
160
MHz
(
T
120
80
40
Transition frequency f
0
–1 –3 –10 –30 –100
Emitter current IE (mA
2
E
50
)
pF
(
40
ob
30
20
10
Collector output capacitance C
0
)
Collector to base voltage VCB (V
Cob — V
1 3 10 30 100
CB
IE=0
f=1MHz
Ta=25˚C
120
)
V
(
100
CER
80
60
40
20
Collector to emitter voltage V
)
Base to emitter resistance RBE (kΩ
V
— R
CER
0
0.1 1 10 1000.3 3 30
BE
IC=10mA
Ta=25˚C
2SC3940A
2SC3940
)
Page 3
Transistor 2SC3940, 2SC3940A
I
— Ta Area of safe operation (ASO)
4
10
3
10
)
)
Ta
(
2
10
Ta=25˚C
(
CEO
I
CEO
I
10
1
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
CEO
VCE=10V
)
A
(
C
0.03
0.01
Collector current I
0.003
0.001
)
10
3
I
CP
1
I
C
0.3
0.1
0.1 1 10 1000.3 3 30
Single pulse
Ta=25˚C
t=1s
2SC3940
t=10ms
2SC3940A
Collector to emitter voltage VCE (V
)
3
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