Datasheet 2SC3931 Datasheet (Panasonic)

Transistor

2.1±0.1

1.3±0.10.9±0.1

0.7±0.1

0.3

+0.1

–0

0.15

+0.1

–0.05

2.0±0.2

1.25±0.1 0.4250.425

1

3

2

0.650.2 0.65

0 to 0.1

0.2±0.1

2SC3931

Silicon NPN epitaxial planer type

For high-frequency amplification

Features

■

●

Optimum for RF amplification of FM/AM radios.

●

High transition frequency fT.

●

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Ratings

30
20

3

15
150
150

–55 ~ +150

Unit

V
V
V

mA

mW

˚C
˚C

Unit: mm

1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package

Marking symbol : U

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
Noise figure

*

hFE Rank classification

Marking Symbol UC UD

Rank C D

h

FE

65 ~ 160 100 ~ 260

Symbol

V

CBO

V

EBO

*

h

FE

V

BE

f

T

C

re

PG
NF

Conditions

IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 6V, IE = –1mA
VCB = 6V, IE = 1mA
VCB = 6V, IE = –1mA, f = 200MHz
VCE = 6V, IC = 1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA, f = 100MHz

min

30

3

65

450

typ

0.72
650

0.8

24

3.3

max

260

1

Unit

V
V

V

MHz

pF
dB
dB

1

Transistor 2SC3931

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IC — V

BE

30

Ta=75˚C

25˚C

–25˚C

25

)
mA

(

20

C

15

10

Collector current I

5

0

02.01.60.4 1.20.8

Base to emitter voltage VBE (V

VCE=6V

CE

12

10

)
mA

(

8

C

6

4

Collector current I

2

0

018612

)

)

Collector to emitter voltage VCE (V

V

CE(sat)

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

25˚C

Collector current IC (mA

IB=100µA

— I

Ta=75˚C

–25˚C

Ta=25˚C

80µA

60µA

40µA

20µA

)

C

IC/IB=10

)

12

10

)
mA

(

8

C

6

4

Collector current I

2

0

0 18060 120

360

FE

300

240

180

120

60

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

IC — I

B

VCE=6V
Ta=25˚C

Base current IB (µA

hFE — I

C

VCE=6V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

)

fT — I

1200

)

1000

MHz

(

T

800

600

400

200

Transition frequency f

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Emitter current IE (mA

2

E

VCB=6V
Ta=25˚C

)

Zrb — I

E

120

)

Ω

(

100

rb

80

60

40

20

Reverse transfer impedance Z

0

– 0.1 – 0.3 –1 –3 –10

Emitter current IE (mA

VCB=6V
f=2MHz
Ta=25˚C

)

Cre — V

)

2.4

pF

(

re

2.0

1.6

1.2

0.8

0.4

Common emitter reverse transfer capacitance C

0

0.1 1 10 1000.3 3 30

Collector to emitter voltage VCE (V

CE

IC=1mA
f=10.7MHz
Ta=25˚C

)

Transistor 2SC3931

)
pF

(

Cob — V

1.2

1.0

ob

0.8

0.6

0.4

0.2

CB

Collector output capacitance C

0

030252051510

Collector to base voltage VCB (V

bie — g

ie

20

yie=gie+jb

ie

58

–2mA

25

–4mA

–7mA

100

58

VCE=10V

18

)

16

mS

(

14

ie

12

10

–1mA

8

=– 0.5mA

6

E

I

4

Input susceptance b

25

2

f=10.7MHz

0

015936 12

Input conductance gie (mS

IE=0
f=1MHz
Ta=25˚C

150

100

PG — I

E

40

35

)

30

dB

(

25

20

15

Power gain PG

10

5

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Emitter current IE (mA

bre — g

0

)

yre=gre+jb

re

VCE=10V

mS

(

–1

re

–2

–3

–4

–5

Reverse transfer susceptance b

–6

– 0.5 0– 0.1– 0.4 – 0.2– 0.3

)

Reverse transfer conductance gre (mS

VCE=10V

6V

re

f=150MHz

f=100MHz
R

g

Ta=25˚C

–4mA

–1mA

IE=–7mA

100

=50Ω

10.7

58

)

25

12

10

)
dB

(

8

6

4

Noise figure NF

2

0

– 0.1 –1 –10 –100– 0.3 –3 –30

0

)
mS

(

–20

fe

–40

–60

–80

–100

Forward transfer susceptance b

–120

0 1008020 6040

)

Forward transfer conductance gfe (mS

NF — I

VCE=6V, 10V

Emitter current IE (mA

bfe — g

–2mA

150

IE=–7mA

10.7

58

100

–4mA

100

100

– 0.4mA

–1mA

150

f=150MHz

E

fe

f=100MHz
R

=50kΩ

g

Ta=25˚C

)

yfe=gfe+jb
VCE=10V

58

fe

)

boe — g

1.2

–1mA

)

1.0

=– 0.5mA

E

I

mS

(

oe

0.8

0.6

0.4

0.2

Output susceptance b

f=10.7MHz

0

0108264

Output conductance goe (mS

–2mA

–4mA

–7mA

58

25

oe

100

yoe=goe+jb
VCE=10V

150

oe

)

3