Page 1
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SC3868
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Features
■
●
High-speed switching
●
High collector to base voltage V
●
Wide area of safe operation (ASO)
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
TC=25°C
Ta=25°C
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
CBO
=25˚C)
C
Ratings
500
500
400
7
3
1.5
0.5
25
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
C
Conditions
VCB = 500V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.8A
IC = 0.8A, IB = 0.16A
IC = 0.8A, IB = 0.16A
VCE = 10V, IC = 0.2A, f = 10MHz
IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 150V
min
400
15
8
typ25max
100
100
1
1.5
0.7
2
0.3
Unit
µA
µA
V
V
V
MHz
µs
µs
µs
1
Page 2
Po wer Transistors 2SC3868
PC—Ta IC—V
40
)
35
W
(
C
30
(1)
25
20
15
(2)
10
5
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
V
(
10
BE(sat)
3
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 310.10.03 0.3
Collector current IC (A
=Ta
(1) T
C
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
=2.0W)
(P
C
V
BE(sat)—IC
25˚C
TC=–25˚C
IC/IB=5
100˚C
)
CE
2.0
1.8
1.6
)
A
(
1.4
C
1.2
1.0
0.8
0.6
Collector current I
0.4
0.2
0
0108264
)
Collector to emitter voltage VCE (V
hFE—I
1000
FE
300
100
TC=100˚C
30
–25˚C
10
3
Forward current transfer ratio h
1
0.01 0.1 10.03 0.3
Collector current IC (A
IB=200mA
C
25˚C
TC=25˚C
120mA
100mA
80mA
60mA
40mA
30mA
20mA
10mA
VCE=5V
)
)
10
V
(
CE(sat)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
1000
300
)
MHz
100
(
T
30
10
Transition frequency f
0.3
0.1
0.001 0.01 0.1 10.003 0.03 0.3
V
CE(sat)—IC
3
1
0.01 0.1 10.03 0.3
Collector current IC (A
fT—I
C
3
1
Collector current IC (A
TC=100˚C
25˚C
VCE=10V
f=10MHz
T
=25˚C
C
IC/IB=5
–25˚C
)
)
Cob—V
10000
)
pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
0.1 1 10 1000.3 3 30
Collector to base voltage VCB (V
2
CB
IE=0
f=1MHz
=25˚C
T
C
)
ton, t
100
30
)
µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01
0 2.52.00.5 1.51.0
Collector current IC (A
, tf — I
stg
C
Pulsed tw=1ms
Duty cycle=1%
=5
I
C/IB
(2I
=–IB2)
B1
=150V
V
CC
=25˚C
T
C
t
on
t
stg
t
f
Area of safe operation (ASO)
10
I
CP
3
)
I
1
A
C
(
C
0.3
0.1
0.03
0.01
Collector current I
0.003
0.001
1 10 100 10003 30 300
)
Collector to emitter voltage VCE (V
Non repetitive pulse
T
10ms
DC
=25˚C
C
t=0.5ms
1ms
)
Page 3
Po wer Transistors 2SC3868
Area of safe operation, reverse bias ASO
8
7
)
6
A
(
C
5
4
I
CP
3
2
Collector current I
I
C
1
0
0 800200 600400 700100 500300
Collector to emitter voltage VCE (V
2
10
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
)
˚C/W
(
10
(t)
th
1
L
I
(2I
T
coil
C/IB1
C
B1
=25˚C
=200µH
=5
=–IB2)
Reverse bias ASO measuring circuit
L coil
T.U.T
I
I
B1
V
in
t
W
–I
B2
)
R
—t
th(t)
(1)
(2)
C
V
CC
V
clamp
–1
10
Thermal resistance R
–2
10
–4
10
–3
–1
–2
10
10
Time t (s
1010
110
10
)
3
2
4
10
3
Loading...