Datasheet 2SC3855Y Specification

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3855

ESCRIPTION

D

·With TO-3PN package

·Complement to type 2SA1491

APPLICATIONS

·Audio and general purpose

PINNING

PIN DESCRIPTION

1 Base

2

3 Emitter

Collector;connected to
mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Absolute maximum ratings(Ta=)

SYMBOL PARAMETER CONDITIONS VALUE UNIT

V

Collector-base voltage Open emitter 200 V

CBO

V

Collector-emitter voltage Open base 140 V

CEO

V

Emitter-base voltage Open collector 6 V

EBO

I

C

I

B

P

C

Collector current 10 A

Base current 4 A

Collector power dissipation TC=25 100 W

T

j

T

stg

Junction temperature 150 

Storage temperature -55~150 

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3855

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V

(BR)CEO

V

CEsat

I

CBO

I

EBO

Collector-emitter breakdown voltage IC=50mA ;IB=0 140 V

Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V

Collector cut-off current VCB=200V; IE=0 100 µA

Emitter cut-off current VEB=6V; IC=0 100 µA

hFE DC current gain IC=3A ; VCE=4V 50

f

T

Transition frequency IC=0.5A ; VCE=12V 20 MHz

Switching times

ton Turn-on time 0.30 µs

IC=5A;RL=12@

=- IB2=0.5A

t

s

t

f

Storage time 2.40 µs

Fall time

I
V

B1

CC

=60V

0.40 µs

2

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3855

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

3

SavantIC Semiconductor Product Specification

Silicon NPN Power Transistors 2SC3855

4