Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3835G
DESCRIPTION
·Low Collector Saturation Voltage
: V
CE(sat)
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Good Linearity of h
APPLICATIONS
·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
= 0.5V(Max)@ IC=3A
= 120V (Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
stg
Collector-Base Voltage 200 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 8 V
Collector Current-Continuous 7 A
Collector Current-Pulse 14 A
B Base Current-Continuous 3 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
70 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3835G
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
h
FE
f
T
C
OB
Switching times
t
on
t
stg
Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 120 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 0.5 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.2 V
Collector Cutoff Current VCB= 200V; IE= 0 100 μA
Emitter Cutoff Current VEB= 8V; IC= 0 100 μA
DC Current Gain IC= 3A ; VCE= 4V 160 220
Current-Gain—Bandwidth Product IE= -0.5A ; VCE= 12V 30 MHz
Output Capacitance
Turn-on Time 0.5 μs
Storage Time 3.0 μs
I
=0 ; VCB=10V;f
E
= 3A ;IB1=0.3A; IB2= -0.6A
I
C
RL= 16.7Ω; VCC= 50V
=1.0MHz
test
110 pF
t
f
isc Website：www.iscsemi.cn
Fall Time
2
0.5 μs
Page 3
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3835G
isc Website：www.iscsemi.cn
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