
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC3691
DESCRIPTION
·Low Collector Saturation Voltage
: V
CE(sat)
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
·High Switching Speed
APPLICATIONS
·Designed for high speed and power switching applications
ABSOLUTE MAXIMUM RATINGS(T
= 0.5V(Max)@ IC= 4A
= 60V (Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
Collector-Base Voltage 100 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
B Base Current-Continuous 2.5 A
Collector Power Dissipation
=25℃
@ T
C
Collector Power Dissipation
=25℃
@ T
a
25
W
2
T
J
T
stg
Junction Temperature 150
Storage Temperature Range -55~150
isc Website:www.iscsemi.cn
℃
℃

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC3691
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE(sat)-1
V
CE(sat) -2
V
BE(sat) -1
V
BE(sat) -2
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
Collector-Emitter Sustaining Voltage IC= 3A ; IB= 0.3A, L= 1mH 60 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A B 0.3 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 0.5 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.15A B 1.2 V
Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 1.5 V
Collector Cutoff Current VCB= 60V; IE= 0 10 μA
Collector Cutoff Current
CE
=125℃
T
a
10
1.0
μA
mA
= 60V; VBE= -1.5V
V
Emitter Cutoff Current VEB= 5V; IC= 0 10 μA
DC Current Gain IC= 0.5A ; VCE= 2V 100
DC Current Gain IC= 1A ; VCE= 2V 100 200 400
DC Current Gain IC= 3A ; VCE= 2V 60
f
T
C
OB
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 150 MHz
Output Capacitance
I
=0 ; VCB= 10V;f
E
= 1.0MHz
test
70 pF
Switching times
t
on
t
stg
t
f
Turn-on Time 0.3 μs
Storage Time 1.5 μs
Fall Time
IC= 3A ; IB1= -IB2= 0.15A
= 17Ω;VCC≈50V
R
L
0.3 μs
h
classifications
FE-2
M L K
100-200 150-300 200-400
isc Website:www.iscsemi.cn
2

INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC3691
isc Website:www.iscsemi.cn 3