Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3550
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
= 800V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
I
B
C
T
J
stg
Collector-Base Voltage 900 V
Collector-Emitter Voltage 800 V
Emitter-Base voltage 10 V
Collector Current-Continuous 3 A
B Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
80 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.5 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC3550
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
Switching times
t
on
t
stg
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V
Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V
Emitter-Base Breakdown voltage IE= 1mA; IC= 0 10 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V
Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.5 V
Collector Cutoff Current VCB= 900V; IE=0 1.0 mA
Emitter Cutoff Current VEB= 10V; IC=0 1.0 mA
DC Current Gain IC= 1A; VCE= 5V 10
Turn-on Time 1.0
Storage Time 4.0
= 1A, IB1= 0.4A; IB2= -0.8A;
I
C
RL= 150Ω; PW= 20μs;
Duty Cycle≤2%
μs
μs
t
f
Fall Time
isc Website：www.iscsemi.cn
2
0.8
μs
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