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INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC3545
DESCRIPTION
·Low Base Time Constant;
r
bb’ • CC
·High Gain Bandwidth Product
fT= 2 GHz TYP. @ I
·Low Feedback Capacitance;
C
= 0.48 pF TYP.
re
APPLICATIONS
·Designed for use as UHF oscillator and mixer in a tuner
of a TV receiver.
ABSOLUTE MAXIMUM RATINGS(T
= 4 ps TYP.
= -5mA, VCE= 10V
E
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
P
T
CBO
CEO
EBO
I
C
T
stg
Collector-Base Voltage 30 V
Collector-Emitter Voltage 15 V
Emitter-Base Voltage 3 V
Collector Current-Continuous 50 mA
Collector Power Dissipation
C
J
=25℃
@T
C
Junction Temperature 125 ℃
Storage Temperature Range -65~125 ℃
0.15 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC3545
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE(
I
CBO
h
FE
f
T
C
re
r
• C
bb’
Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA 0.5 V
)
sat
Collector Cutoff Current VCB= 12V; IE= 0 0.1
DC Current Gain IC= 5mA ; VCE= 10V 50 250
Current-Gain—Bandwidth Product IE= -5mA ; VCE= 10V 1.3 2.0 GHz
Feedback Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.48 1.0 pF
Base Time Constant VCE= 10V,IE = -5mA,f = 31.9 MHz 4 10 ps
C
h
Classifications
FE
Class M/P L/Q K/R
Marking T42 T43 T44
μA
h
FE
50-100 70-140 120-250
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC3545
isc Website：www.iscsemi.cn
Page 4
INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC3545
S-PARAMETER
V
CE = 10 V, IC = 5 mA , ZO = 50Ω
Freque.
MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.472 -80.6 7.581 114.1 0.037 60.2 0.780 -8.2
400 0.310 -117.3 4.029 92.9 0.055 55.5 0.723 -15.1
600 0.261 -139.9 2.926 81.7 0.077 60.2 0.721 -18.8
800 0.262 -160.4 2.118 70.2 0.098 62.8 0.698 -22.6
1000 0.270 -176.6 1.860 62.8 0.108 64.6 0.691 -25.1
1200 0.288 172.3 1.504 54.4 0.125 65.7 0.688 -30.7
1400 0.323 162.4 1.413 47.9 0.148 66.4 0.664 -35.1
1600 0.356 151.0 1.201 40.9 0.160 68.0 0.658 -39.3
S
11
S
21
S
12
S
22
VCE = 10 V, IC = 10 mA , ZO = 50Ω
Freque.
MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.323 -101.4 8.735 104.9 0.037 49.5 0.711 -8.5
400 0.246 -136.2 4.383 87.4 0.052 65.2 0.693 -13.8
600 0.247 -158.8 3.120 78.0 0.074 67.3 0.696 -16.8
800 0.273 -173.7 2.259 67.2 0.086 68.2 0.679 -20.0
1000 0.299 172.6 1.968 60.1 0.102 69.4 0.671 -23.8
1200 0.314 162.7 1.589 52.5 0.126 70.1 0.663 -26.6
1400 0.353 154.5 1.483 46.3 0.146 70.4 0.648 -33.7
1600 0.380 144.7 1.257 39.5 0.166 70.3 0.648 -38.5
S
11
S
21
S
12
S
22
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc RF Product Specification
isc Silicon NPN RF Transistor 2SC3545
isc Website：www.iscsemi.cn
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