Datasheet 2SC3063 Datasheet (Panasonic)

Power Transistors

2SC3063

Silicon NPN triple diffusion planar type

For TV video output amplification

■ Features

•

High collector to emitter voltage V

•

Small collector output capacitance C

•

TO-126B package which requires no insulation plate for installa­tion to the heat sink

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Collector to base voltage V

Collector to emitter voltage V

Emitter to base voltage V

Peak collector current I

Collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CEO

ob

CBO

CEO

EBO

CP

C

C

j

−55 to +150 °C

stg

300 V

300 V

7V

200 mA

100 mA

1.2 W

150 °C

φ 3.16

±0.1

0.75

+0.5

8.0

–0.1

±0.1

4.6

±0.2

123

±0.5

±0.3

11.0

3.8

±0.1

1.9

±1.0

16.0

0.5

±0.1

2.3

±0.2

TO-126B-A1 Package

0.5

±0.1

1 : Emitter
2 : Collector
3 : Base

Unit: mm

3.2

±0.2

±0.1

3.05

1.76

±0.1

■ Electrical Characteristics TC = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Collector to base voltage V

Collector to emitter voltage V

Emitter to base voltage V

Forward current transfer ratio h

Base to emitter voltage V

Collector to emitter saturation voltage

Transition frequency f

Collector output capacitance C

V

CBO

CEO

EBO

FE

BE

CE(sat)

T

ob

IC = 10 µA, IE = 0 300 V

IC = 0.1 mA, IB = 0 300 V

IE = 10 µA, IC = 0 7 V

VCE = 50 V, IC = 5 mA 50 250

VCE = 10 V, IC = 30 mA 1.2 V

IC = 30 mA, IB = 3 mA 1.5 V

VCB = 30 V, IE = −20 mA, f = 200 MHz

70 140 MHz

VCB = 30 V, IE = 0, f = 1 MHz 2.4 pF

193

2SC3063

Power Transistors

PC  T

a

1.6

)
W

(

C

1.2

0.8

0.4

Without heat sink

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

 I

)
V

IC/IB=10

(

3

CE(sat)

1

0.3

TC=100˚C

0.1

–25˚C

0.03

0.01

Collector to emitter saturation voltage V

1 3 10 30 100

CE(sat)

25˚C

Collector current IC (mA

)

C

)

IC  V

CE

120

TC=25˚C

100

)
mA

(

80

C

60

40

Collector current I

20

0

06010 5020 4030

IB=2.0mA

Collector to emitter voltage VCE (V

hFE  I

1000

FE

300

T

=100

˚C

C

100

Forward current transfer ratio h

–25˚C

30

10

3

1

1 30010010330

C

25˚C

Collector current IC (mA

1.6mA

1.2mA

1.0mA

0.8mA

0.6mA

0.4mA

0.2mA

VCE=50V

)

240

200

)
mA

(

160

C

120

80

Collector current I

40

0

02.01.61.20.80.4

)

Base to emitter voltage VBE (V

240

220

)

200

MHz

180

(

T

160

140

120

100

80

60

40

Transition frequency f

20

0

–1 –3 –10 –30 –100

IC  V

BE

25˚C

TC=100˚C

–25˚C

fT  I

E

VCB=30V
f=200MHz
T

Emitter current IE (mA

VCE=10V

=25˚C

C

)

)

Cob  V

10

)
pF

(

8

ob

6

4

2

Collector output capacitance C

0

1310 30 100 300 1000

Collector to base voltage VCB (V

194

CB

IE=0
f=1MHz

=25˚C

T

C

1000

300

)

100

A
(

C

Collector current I

)

Area of safe operation (ASO)

Single pulse

=25˚C

T

I

CP

I

C

30

10

3

1

0.3

0.1
13

10 30 100 300 1000

Collector to emitter voltage VCE (V

C

t=2ms

t=1s

)

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