Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2929
DESCRIPTION
·High Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Switching Speed
·High Reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
= 400V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
I
I
P
T
T
C
B
C
J
stg
Collector-Base Voltage 450 V
Collector-Emitter Voltage 400 V
Collector-Emitter Voltage 400 V
Emitter-Base voltage 7 V
Collector Current-Continuous 3 A
B Base Current-Continuous 1 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -45~150 ℃
40 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 3.0 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SC2929
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
Switching times
Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V
Collector-Emitter Sustaining Voltage IC= 0.5A; IB= 0 400 V
Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 450 V
Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 0.3 V
Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 0.9 V
Collector Cutoff Current VCB= 450V; IE=0 0.1 mA
Emitter Cutoff Current VEB= 7V; IC=0 0.1 mA
DC Current Gain IC= 0.5A; VCE= 5V 20 50
t
on
t
stg
t
f
Turn-on Time 1.5 μs
IC= 3A, IB1= -IB2= 0.6A
= 20Ω;PW=20μs
Storage Time 2.0 μs
Fall Time
R
L
Duty Cycle≤2%
0.8 μs
isc Website：www.iscsemi.cn
2
Loading...