Datasheet 2SC2898 Datasheet (HIT)

Page 1
2SC2898
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector peak current I Base current I Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
B
1
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
500 V 400 V 7V 8A 16 A 4A 50 W
Page 2
2SC2898
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain voltage
Collector to emitter sustain voltage
Emitter to base breakdown voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation voltage
Base to emitter saturation voltage
Turn on time t Storage time t Fall time t
Note: 1. Pulse test
V
CEO(sus)
V
CEX(sus)
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
V
CE(sat)
V
BE(sat)
on
stg
f
400 V IC = 0.2 A, RBE = ,
L = 100 mH
400 V IC = 8 A, IB1 = 1.6 A,
I
= –0.8 A, VBE = –5 V,
B2
L = 180 µH, Clamped
7——VI
= 10 mA, IC = 0
E
——50µAVCB = 400 V, IE = 0 ——50µAVCE = 350 V, RBE = 15 VCE = 5 V, IC = 4 A* 7—— V
= 5 V, IC = 8 A*
CE
1.0 V IC = 4 A, IB = 0.8 A*
1.5 V
0.8 µsI
= 8 A, IB1 = –IB2 = 1.6 A,
C
2.0 µsVCC 150 V — 0.8 µs
1
1
1
Maximum Collector Dissipation Curve
60
(W)
C
40
20
Collector power dissipation P
0 50 100 150
Case temperature T
(°C)
C
100
Area of Safe Operation
I
C(peak)
I
(Continuous)
C(max)
10
(A)
C
DC Operation (T
1.0
Ta = 25°C, 1 Shot
0.1
Collector current I
0.01 13 3010 100
Collector to emitter voltage V
50 µs
250 µs
PW = 10 ms
1 ms
C
= 25°C)
25 µs
300 1,000
(V)
CE
2
Page 3
2SC2898
Collector Current Derating Rate
100
80
IS/B Limit Area
60
40
20
Collector current derating rate (%)
0 50 100 150
Case temperature T
Reverse Bias Area of Safe Operation
20
16
(A)
C
12
(°C)
C
300 V, 16 A
Transient Thermal Resistance
10
3
(°C/W)
j-c
1.0
10 ms–10 s
0.3
Thermal resistence θ
0.1
0.03
10 µs–10 ms
TC = 25°C
0.01
0.1 1.00.01
10 (s)
10 (ms)0.1 1.00.01
Collector to Emitter Voltage vs.
Base to Emitter Resistance
600
(V)
(BR)CER
IC = 1 mA
500
8
Collector current I
4
I
= –0.8 A
B2
Collector to emitter voltage V
200 500
100 300 4000
400 V, 8 A
450 V,
1.5 A
(V)
CE
400
Collector to emitter voltage V
300
1 k 10 k 100 k 1 M100
Base to emitter resistance R
BE
()
3
Page 4
2SC2898
5
4
(A)
C
3
2
Collector current I
1
Collector to emitter voltage V
100
FE
30
10
Typical Output Characteristics
0.6
0.4
0.5
0.3
0.2
0.1
0.05 A
TC = 25°C
I
= 0
B
1340
25
CE
DC Current Transfer Ratio vs.
Collector Current
75°C
25°C
= –25°C
T
C
(V)
Typical Transfer Characteristics
5
4
(A)
C
3
2
Collector current I
1
0.4 1.2 1.60
Base to emitter voltage VBE (V)
Collector to Emitter Saturation
(V)
CE(sat)
10
Voltage vs. Base Current
3
1.0
IC = 1 A
0.3
TC = 25°C V
= 5 V
CE
0.8 2.0
2 A
5 A
3
DC current transfer ratio h
1
0.01
0.03 0.1 1.0 10 Collector current I
0.3
VCE = 5 V
3
(A)
C
0.1
0.03 TC = 25°C
0.01
Collector to emitter saturation voltage V
0.03 0.1 0.3 10
0.01 Base current I
1.0 3 (A)
B
4
Page 5
2SC2898
Base to Emitter Saturation Voltage
vs. Collector Current
(V)
10
BE(sat)
3
1.0
0.3
0.1
0.03
0.01
Base to emitter saturation voltage V
0.03 0.1 1.0 3
0.01 0.3 Collector current I
TC = 25°C I
= 5 I
C
B
1.0
0.3
0.1
Switching time t (µs)
0.03
0.01
C
(A)
10
Switching Time vs. Case Temperature
5 3
t
stg
1.0 t
f
Switching Time vs. Collector Current
10
3
IC = 5 I
.
V
= 150 V
.
CC
0.030.01 0.3 1.0
0.1 103
Collector current I
C
t
stg
t
f
t
on
= –5 IB2
B1
(A)
Switching time t (µs)
0.05
0.3
0.1
t
on
IC = 8 A
= I
I
B1
B2
R
= 19
L
.
V
= 150 V
.
CC
250 75 100
50 125
Case temperature T
(°C)
C
= 1.6 A
5
Page 6
11.5 MAX
Unit: mm
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
1.27
2.54 ± 0.5
10.16 ± 0.2
9.5
8.0
φ 3.6
-0.08
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
+0.2
6.4
–0.1
+0.1
4.44 ± 0.2
1.26 ± 0.15
2.7 MAX
14.0 ± 0.5 15.0 ± 0.3
0.5 ± 0.1
Hitachi Code JEDEC EIAJ Weight
(reference value)
TO-220AB Conforms Conforms
1.8 g
Page 7
Cautions
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