Datasheet 2SC2613 Datasheet (HIT)

Page 1
2SC2613
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1. Base
2. Collector
1
2
3
(Flange)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Collector peak current I Base current I Collector power dissipation PC*
CBO
CEO
EBO
C
C(peak)
B
1
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
500 V 400 V 7V 5A 10 A
2.5 A 40 W
Page 2
2SC2613
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain voltage
Emitter to base breakdown voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation voltage
Base to emitter saturation voltage
Turn on time t Storage time t Fall time t
Note: 1. Pulse test.
V
CEO(sus)
V
CEX(sus)
V
(BR)EBO
CBO
I
CEO
FE1
h
FE2
V
CE(sat)
V
BE(sat)
on
stg
f
400 V IC = 0.2 A, RBE = ,
L = 100 mH
400 V IC = 5 A, IB1 = –IB2 = 1 A
V
= –5 V, L = 180 µH,
BE
Clamped
7——VI
= 10 mA, IC = 0
E
100 µAVCB = 400 V, IE = 0 — 100 µAVCE = 350 V, RBE = 15 VCE = 5 V, IC = 2.5 A* 7—— V
= 5 V, IC = 5 A*
CE
1.0 V IC = 2.5 A, IB = 0.5 A*
1.5 V IC = 2.5 A, IB = 0.5 A*
1.0 µsI
= 5 A, IB1 = –IB2 = 1 A,
C
1.2 2.5 µsVCC 150 V — 1.0 µs
1
1
1
1
Maximum Collector Dissipation Curve
60
40
20
Collector power dissipation Pc (W)
0
50 100 150
Case Temperature T
C
(°C)
Area of Safe Operation
100
iC
(peak)
10
(A)
C
IC
(max)
(Continuous)
1.0
0.1
Collector Current I
Ta = 25°C, 1 Shot
0.01
DC Operation
(T
C
= 25°C)
250 µs
1 ms
PW = 10 ms
1 3 10 30 100 300 1,000
Collector to emitter Voltage V
25 µs
CE
50 µs
(V)
2
Page 3
100
80
Collector Current Derating Rate
IS/B Limit Area
(°C/W)
j-c
1.0
2SC2613
Transient Thermal Resistance
10
3
10 ms–10 s
60
40
20
Collector Current derating rate (%)
0 50 100 150
Case temperature T
(°C)
C
Reverse Bias Area of Safe Operation
10
325 V, 10 A
8
(A)
C
6
400 V, 5 A
4
Collector Current I
2
IB2 = –1.0 A
450 V, 1.0 A
0
0 100 200 300 400 500
Collector to emitter Voltage V
CE
(V)
0.3
10 µs–10 ms
Thermal resistance θ
0.1
0.03 TC = 25°C
0.01
0.01 0.1 1.0 10 (s)
0.01 0.1 1.0 10 (ms) Time t
Collector to Emitter Voltage
vs. Base to Emitter Resistance
600
(V)
CER
IC = 1 mA
500
400
Collector to emitter voltage V
300
100 1 k 10 k 100 k 1 M
Base to emitter resistance R
BE
()
3
Page 4
2SC2613
5
4
(A)
C
3
2
Collector Current I
1
0
Collector to emitter Voltage V
DC Current Transfer Ratio vs.
100
FE
30
Typical Output Characteristics
0.5
0.4
0.3
0.2
0.1
0.05 A
TC = 25°C
IB = 0
12345
(V)
CE
Collector Current
75°C 25°C
= –25°C
T
C
Typical Transfer Characteristics
5
4
(A)
C
3
2
Collector Current I
1
0 0.4 0.8
Base to emitter voltage V
Collector to Emitter Saturation
Voltage vs. Base Current
10
3
2 A
1.0
TC = 25°C V
= 5 V
CE
1.2 1.6 2.0
(V)
BE
10
3
DC current transfer ratio h
1
0.01 0.03 0.1 0.3 1.0 3 10 Collector current I
C
V
CE
(A)
= 5 V
0.3
CE (sat)
V
1 A
0.1
0.03
Collector to emitter saturation voltage
0.01
IC = 0.5 A
TC = 25°C
0.01 0.03 0.1 0.3 1.0 3 10 Base current I
B
(A)
4
Page 5
2SC2613
Base to Emitter Saturation Voltage
vs. Collector Current
10
3
1.0
0.3
BE (sat)
V
0.1
0.03
Base to emitter saturation voltage
0.01
0.01 0.03 0.1 0.3 1.0 3 10 Collector current I
Switching time t (µs)
10
IC = 5 IB T
= 25°C
C
3
1.0
0.3
0.1
Switching time t (µs)
0.03
0.01
0.01 0.03 0.1 0.3 1.0 3 10
(A)
C
Switching Time vs. Case Temperature
5
2
t
stg
1.0 t
f
0.5
t
on
0.2
0.1
0.05 0 25 50 75 100 125
Case temperature T
IC = 5 A I
B1 = –IB2
R
= 30
L
.
=
V
150 V
.
CC
(°C)
C
Switching Time vs. Collector Current
t
stg
t
f
t
on
IC = 5 I VCC 150 V=
Collector current I
.
C
.
(A)
B1 =
–5 I
=1 A
B2
5
Page 6
11.5 MAX
Unit: mm
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
1.27
2.54 ± 0.5
10.16 ± 0.2
9.5
8.0
φ 3.6
-0.08
1.5 MAX
0.76 ± 0.1
2.54 ± 0.5
+0.2
6.4
–0.1
+0.1
4.44 ± 0.2
1.26 ± 0.15
2.7 MAX
14.0 ± 0.5 15.0 ± 0.3
0.5 ± 0.1
Hitachi Code JEDEC EIAJ Weight
(reference value)
TO-220AB Conforms Conforms
1.8 g
Page 7
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223
Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533
Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Loading...