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Power Transistors
2SC2590
Silicon NPN epitaxial planar type
For low-frequency power amplification
■ Features
• Excellent collector current IC characteristics of forward current
transfer ratio h
• High transition frequency f
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
FE
T
φ 3.16
±0.1
8.0
+0.5
–0.1
±0.3
3.8
±0.1
1.9
±0.5
11.0
±1.0
16.0
Unit: mm
3.2
±0.2
±0.1
3.05
■ Absolute Maximum Ratings Ta = 25°C
0.75
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
120 V
120 V
5V
0.5 A
1.0 A
1.2 W
150 °C
±0.1
4.6
±0.2
123
0.5
±0.1
0.5
2.3
±0.2
TO-126B-A1 Package
±0.1
1: Emitter
2: Collector
3: Base
1.76
±0.1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
1
Forward current transfer ratio
*
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
CEOIC
EBOIE
h
FE1
h
FE2
CE(sat)IC
BE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
2: Rank classification
*
Rank Q R
h
FE1
90 to 155 130 to 220
= 100 µA, IB = 0 120 V
= 10 µA, IC = 05V
2
*
VCE = 10 V, IC = 150 mA 90 220
VCE = 5 V, IC = 500 mA 65 100
= 300 mA, IB = 30 mA 1.0 V
= 300 mA, IB = 30 mA 1.2 V
VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF
ob
Publication date: January 2003 SJD00100BED
1
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2SC2590
PC T
6
5
(W)
C
4
3
2
1
Collector power dissipation P
0
0 20040 80 160120
(V)
1
BE(sat)
0.1
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
(1)
(2)
Ambient temperature Ta (°C)
V
I
BE(sat)
TC=–25˚C
100˚C
25˚C
a
280
160
(mA)
C
120
80
Collector current I
40
0
012210486
IC V
CE
TC=25˚C
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
(V)
CE(sat)
1
0.1
Collector-emitter saturation voltage V
0.01
0.01 0.1 1
Collector-emitter voltage VCE (V)
C
IC/IB=10
FE
1
000
100
hFE I
TC=100˚C
25˚C
–25˚C
C
VCE=10V
400
300
(MHz)
T
200
V
CE(sat)
IC/IB=10
25˚C
TC=100˚C
Collector current IC (A)
fT I
I
E
C
–25˚C
VCB=10V
f=200MHz
T
=25˚C
C
Base-emitter saturation voltage V
0.01
0.01
0.1 1
Collector current IC (A)
80
Cob V
(pF)
ob
C
60
40
20
Collector output capacitance
(Common base, input open circuited)
0
1 10 100
CB
Collector-base voltage VCB (V)
IE=0
f=1MHz
T
=25˚C
C
Forward current transfer ratio h
10
0.01 0.1 1
Collector current IC (A)
Safe operation area
10
I
CP
1
(A)
C
I
C
0.1
Collector current I
0.01
0.001
1
10 100
Collector-emitter voltage VCE (V)
t=1s
Single pulse
T
t=10ms
=25˚C
C
1 000
100
Transition frequency f
0
−1 −10 −100
Emitter current IE (mA)
2
SJD00100BED
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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