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SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2579
ESCRIPTION
D
·With TO-3PN package
·High power dissipation
·High current capability
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1 Base
2
3 Emitter
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 160 V
CBO
V
Collector-emitter voltage Open base 160 V
CEO
V
Emitter-base voltage Open collector 6 V
EBO
I
C
P
C
T
j
Collector current 8 A
Collector power dissipation TC=25 80 W
Junction temperature 150
T
Storage temperature -55~150
stg
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SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2579
HARACTERISTICS
C
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Collector-base breakdown voltage IC=5mA; IE=0 160 V
Collector-emitter breakdown voltage IC=10mA ;RBE=9 160 V
Emitter-base breakdown voltage IE=5mA ; IC=0 6 V
Collector cut-off current VCB=160V; IE=0 0.1 mA
Emitter cut-off current VEB=6V; IC=0 0.1 mA
DC current gain IC=3A ; VCE=4V 50
Collector-emitter saturation voltage IC=5A ; IB=0.5A 2.0 V
Transition frequency IC=0.5A ; VCE=10V 20 MHz
2
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SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2579
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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